2SC3669-Y,T2PASF(M
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- Mfr.Part #
- 2SC3669-Y,T2PASF(M
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- SC-71
- Datasheet
- Download
- Description
- TRANS NPN 80V 2A MSTM
- Stock
- 15,782
- In Stock ：
- 15,782
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- SC-71
- Published :
- 2009
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 1A
- Packaging :
- Bulk
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 500mA 2V
- Frequency - Transition :
- 100MHz
- Transistor Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 1W
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Current - Collector (Ic) (Max) :
- 2A
- Mounting Type :
- Through Hole
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- Datasheets
- 2SC3669-Y,T2PASF(M
NPN 150°C TJ 1μA ICBO SC-71 Bulk Through Hole
2SC3669-Y,T2PASF(M Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 70 @ 500mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 1A.This device displays a 80V maximum voltage - Collector Emitter Breakdown.
2SC3669-Y,T2PASF(M Features
the DC current gain for this device is 70 @ 500mA 2V
the vce saturation(Max) is 500mV @ 50mA, 1A
2SC3669-Y,T2PASF(M Applications
There are a lot of Toshiba Semiconductor and Storage
2SC3669-Y,T2PASF(M applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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