2SC3649S-TD-H
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- Mfr.Part #
- 2SC3649S-TD-H
- Manufacturer
- onsemi
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 160V 1.5A PCP
- Stock
- 37,388
- In Stock ：
- 37,388
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Halogen Free :
- Halogen Free
- Max Collector Current :
- 1.5A
- Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 500mW
- JESD-609 Code :
- e6
- Package / Case :
- TO-243AA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 140 @ 100mA 5V
- ECCN Code :
- EAR99
- Operating Temperature :
- 150°C TJ
- Collector Base Voltage (VCBO) :
- 180V
- Terminal Position :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 450mV @ 50mA, 500mA
- Reach Compliance Code :
- not_compliant
- Polarity/Channel Type :
- NPN
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Number of Terminations :
- 3
- Transition Frequency :
- 120MHz
- hFE Min :
- 100
- Collector Emitter Voltage (VCEO) :
- 160V
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Transistor Type :
- NPN
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Case Connection :
- COLLECTOR
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Mounting Type :
- Surface Mount
- HTS Code :
- 8541.21.00.75
- Pin Count :
- 3
- Frequency - Transition :
- 120MHz
- Published :
- 2012
- Factory Lead Time :
- 2 Weeks
- Power - Max :
- 500mW
- Base Part Number :
- 2SC3649
- Emitter Base Voltage (VEBO) :
- -6V
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Flat
- Surface Mount :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 160V
- Datasheets
- 2SC3649S-TD-H
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2SC3649S-TD-H Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 140 @ 100mA 5V.When VCE saturation is 450mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -6V can achieve high levels of efficiency.In the part, the transition frequency is 120MHz.A maximum collector current of 1.5A volts can be achieved.
2SC3649S-TD-H Features
the DC current gain for this device is 140 @ 100mA 5V
the vce saturation(Max) is 450mV @ 50mA, 500mA
the emitter base voltage is kept at -6V
a transition frequency of 120MHz
2SC3649S-TD-H Applications
There are a lot of ON Semiconductor
2SC3649S-TD-H applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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