2SC3332T-AA
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- Mfr.Part #
- 2SC3332T-AA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 160V 0.7A 3NP
- Stock
- 33,100
- In Stock ：
- 33,100
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 180V
- Max Collector Current :
- 700mA
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 120MHz
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 25mA, 250mA
- Packaging :
- Tape and Box (TB)
- Max Power Dissipation :
- 700mW
- Power Dissipation :
- 700mW
- Base Part Number :
- 2SC3332
- ECCN Code :
- EAR99
- Polarity/Channel Type :
- NPN
- RoHS Status :
- RoHS Compliant
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Width :
- 4mm
- Contact Plating :
- Tin
- Lead Free :
- Lead Free
- Frequency :
- 120MHz
- Max Breakdown Voltage :
- 160V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mount :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 6V
- Published :
- 2012
- Pin Count :
- 3
- Factory Lead Time :
- 4 Weeks
- Transistor Type :
- NPN
- Number of Pins :
- 3
- Height :
- 5mm
- Collector Emitter Saturation Voltage :
- 400mV
- Operating Temperature :
- 150°C TJ
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Collector Emitter Breakdown Voltage :
- 160V
- Length :
- 5mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 5V
- Collector Emitter Voltage (VCEO) :
- 160V
- Datasheets
- 2SC3332T-AA
NPN 150°C TJ 100nA ICBO 1 Elements NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2SC3332T-AA Overview
In this device, the DC current gain is 100 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 400mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 25mA, 250mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Input voltage breakdown is available at 160V volts.Single BJT transistor is possible for the collector current to fall as low as 700mA volts at Single BJT transistors maximum.
2SC3332T-AA Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 25mA, 250mA
the emitter base voltage is kept at 6V
2SC3332T-AA Applications
There are a lot of ON Semiconductor
2SC3332T-AA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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