2SC3332T-AA
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- Mfr.Part #
- 2SC3332T-AA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 160V 0.7A 3NP
- Stock
- 33,100
- In Stock ：
- 33,100
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 160V
- Polarity/Channel Type :
- NPN
- Packaging :
- Tape and Box (TB)
- Width :
- 4mm
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Collector Emitter Saturation Voltage :
- 400mV
- Transistor Type :
- NPN
- Contact Plating :
- Tin
- Base Part Number :
- 2SC3332
- Frequency :
- 120MHz
- Emitter Base Voltage (VEBO) :
- 6V
- RoHS Status :
- RoHS Compliant
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Power Dissipation :
- 700mW
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 25mA, 250mA
- Power Dissipation :
- 700mW
- Height :
- 5mm
- Gain Bandwidth Product :
- 120MHz
- Collector Base Voltage (VCBO) :
- 180V
- Length :
- 5mm
- Element Configuration :
- Single
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 160V
- Max Breakdown Voltage :
- 160V
- Max Collector Current :
- 700mA
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Factory Lead Time :
- 4 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2012
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 5V
- Mount :
- Through Hole
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Number of Elements :
- 1
- Datasheets
- 2SC3332T-AA
NPN 150°C TJ 100nA ICBO 1 Elements NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
2SC3332T-AA Overview
In this device, the DC current gain is 100 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 400mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 25mA, 250mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Input voltage breakdown is available at 160V volts.Single BJT transistor is possible for the collector current to fall as low as 700mA volts at Single BJT transistors maximum.
2SC3332T-AA Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 25mA, 250mA
the emitter base voltage is kept at 6V
2SC3332T-AA Applications
There are a lot of ON Semiconductor
2SC3332T-AA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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