2SC3332S
- Mfr.Part #
- 2SC3332S
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 160V 0.7A 3NP
- Stock
- 1,180
- In Stock :
- 1,180
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 700mA
- Transistor Type :
- NPN
- Power - Max :
- 700mW
- Supplier Device Package :
- 3-NP
- Frequency - Transition :
- 120MHz
- Packaging :
- Bulk
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 140 @ 100mA 5V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Voltage - Collector Emitter Breakdown (Max) :
- 160V
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 25mA, 250mA
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- Non-RoHS Compliant
- Datasheets
- 2SC3332S

NPN 150°C TJ 100nA ICBO TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
2SC3332S Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 140 @ 100mA 5V.When VCE saturation is 400mV @ 25mA, 250mA, transistor means Ic has reached transistors maximum value (saturated).Supplier package 3-NP contains the product.The device has a 160V maximal voltage - Collector Emitter Breakdown.
2SC3332S Features
the DC current gain for this device is 140 @ 100mA 5V
the vce saturation(Max) is 400mV @ 25mA, 250mA
the supplier device package of 3-NP
2SC3332S Applications
There are a lot of Rochester Electronics, LLC
2SC3332S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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