2SB1457,T6YMEF(M
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- Mfr.Part #
- 2SB1457,T6YMEF(M
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS PNP 100V 2A TO92MOD
- Stock
- 30,701
- In Stock ：
- 30,701
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 2A
- Published :
- 2009
- Supplier Device Package :
- TO-92MOD
- Mounting Type :
- Through Hole
- Frequency - Transition :
- 50MHz
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- Packaging :
- Bulk
- Transistor Type :
- PNP
- Voltage - Collector Emitter Breakdown (Max) :
- 100V
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power - Max :
- 900mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 1A 2V
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1mA, 1A
- Datasheets
- 2SB1457,T6YMEF(M
PNP 150°C TJ 10μA ICBO TO-226-3, TO-92-3 Long Body Bulk Through Hole
2SB1457,T6YMEF(M Overview
This device has a DC current gain of 2000 @ 1A 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 1.5V @ 1mA, 1A means Ic has reached its maximum value(saturated).Product package TO-92MOD comes from the supplier.Collector Emitter Breakdown occurs at 100VV - Maximum voltage.
2SB1457,T6YMEF(M Features
the DC current gain for this device is 2000 @ 1A 2V
the vce saturation(Max) is 1.5V @ 1mA, 1A
the supplier device package of TO-92MOD
2SB1457,T6YMEF(M Applications
There are a lot of Toshiba Semiconductor and Storage
2SB1457,T6YMEF(M applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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