2SB1382

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Mfr.Part #
2SB1382
Manufacturer
Sanken Electric Co., Ltd.
Package / Case
TO-3P-3 Full Pack
Datasheet
Download
Description
TRANS PNP DARL 120V 16A TO3PF
Stock
8,598
In Stock :
8,598

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Manufacturer :
Sanken Electric Co., Ltd.
Product Category :
Transistors - Bipolar (BJT) - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Terminals :
3
Transition Frequency :
50MHz
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Max Collector Current :
16A
Base-Emitter Saturation Voltage (Max) :
2.5(V)
Collector Emitter Voltage (VCEO) :
1.5V
Collector Current-Max (IC) :
16 A
Operating Temperature Classification :
Military
Max Power Dissipation :
75W
Collector Current (DC) :
16(A)
Emitter-Base Voltage :
6(V)
Additional Feature :
BUILT-IN BIAS RESISTOR
Collector-Emitter Voltage :
120(V)
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Transistor Application :
SWITCHING
Polarity :
PNP
RoHS :
Compliant
Package :
Bulk
Current - Collector Cutoff (Max) :
10μA ICBO
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 16mA, 8A
Pin Count :
3
Reach Compliance Code :
Unknown
Maximum Collector Cut-off Current :
10
Operating Temperature :
150°C TJ
Power Dissipation-Max (Abs) :
75 W
Power Dissipation :
75(W)
Factory Lead Time :
36 Weeks
Configuration :
Single
Number of Elements :
1
Package / Case :
TO-3P-3 Full Pack
Manufacturer :
Sanken Electric Co Ltd
Series :
--
Mounting :
Through Hole
DC Current Gain :
2000
Mounting Type :
Through Hole
Lead Free :
Lead Free
Power - Max :
75W
Published :
2007
Supplier Device Package :
TO-3PF
Operating Temp Range :
-55C to 150C
Surface Mount :
No
Collector-Base Voltage :
120(V)
Current - Collector (Ic) (Max) :
16A
Pbfree Code :
yes
Terminal Form :
THROUGH-HOLE
RoHS Status :
RoHS Compliant
Case Connection :
Isolated
Transistor Type :
PNP - Darlington
Collector Emitter Breakdown Voltage :
120V
Collector-Emitter Voltage-Max :
120 V
Packaging :
Bulk
Rad Hardened :
No
Terminal Position :
Single
Number of Terminations :
3
Product Status :
Obsolete
DC Current Gain (hFE) (Min) @ Ic, Vce :
2000 @ 8A 4V
Voltage - Collector Emitter Breakdown (Max) :
120V
Mount :
Through Hole
Transistor Element Material :
SILICON
Polarity/Channel Type :
PNP
JESD-30 Code :
R-PSFM-T3
Frequency - Transition :
50MHz
Package Type :
TO-3PF
ECCN Code :
EAR99
DC Current Gain-Min (hFE) :
2000
Package Shape :
RECTANGULAR
Qualification Status :
Not Qualified
Datasheets
2SB1382
Introducing Transistors - Bipolar (BJT) - Single Sanken Electric Co., Ltd. 2SB1382 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Package / Case:TO-3P-3 Full Pack, Mounting Type:Through Hole, Number of Terminations:3, 2SB1382 pinout, 2SB1382 datasheet PDF, 2SB1382 amp .Beyond Transistors - Bipolar (BJT) - Single Sanken Electric Co., Ltd. 2SB1382 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Sanken Electric Co., Ltd. 2SB1382


PNP - Darlington 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON PNP TO-3P-3 Full Pack Bulk Through Hole

2SB1382 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 2000 @ 8A 4V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is a transition frequency of 50MHz in the part.There is no device package available from the supplier for this product.120 V is the maximum collector-emitter voltage setting.Single BJT transistor shows a 120V maximal voltage - Collector EmSingle BJT transistorter Breakdown.When collector current reaches its maximum, it can reach 16A volts.

2SB1382 Features


the DC current gain for this device is 2000 @ 8A 4V
the vce saturation(Max) is 1.5V @ 16mA, 8A
a transition frequency of 50MHz
the supplier device package of TO-3PF


2SB1382 Applications


There are a lot of Sanken
2SB1382 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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