2SB1257

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Mfr.Part #
2SB1257
Manufacturer
Sanken Electric Co., Ltd.
Package / Case
TO-220-3 Full Pack
Datasheet
Download
Description
TRANS PNP DARL 60V 4A TO220F
Stock
6,216
In Stock :
6,216

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Manufacturer :
Sanken Electric Co., Ltd.
Product Category :
Transistors - Bipolar (BJT) - Single
Configuration :
Single
Lead Free :
Lead Free
Rad Hardened :
No
Transistor Type :
PNP - Darlington
Terminal Position :
Single
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Transistor Application :
SWITCHING
Series :
-
Emitter-Base Voltage :
6(V)
ECCN Code :
EAR99
DC Current Gain (hFE) (Min) @ Ic, Vce :
2000 @ 3A 4V
Pin Count :
3
Reach Compliance Code :
Unknown
Terminal Form :
THROUGH-HOLE
Factory Lead Time :
12 Weeks
Voltage - Collector Emitter Breakdown (Max) :
60 V
Packaging :
Bulk
Number of Terminations :
3
DC Current Gain :
2000@3000MA
Power Dissipation :
25(W)
Collector Emitter Voltage (VCEO) :
1.5V
Collector Current-Max (IC) :
4 A
Power Dissipation-Max (Abs) :
25 W
Mounting :
Through Hole
Transition Frequency :
200MHz
Collector-Emitter Voltage-Max :
60 V
Frequency - Transition :
150MHz
Package / Case :
TO-220-3 Full Pack
Qualification Status :
Not Qualified
RoHS Status :
RoHS Compliant
Mount :
Through Hole
Published :
2007
Operating Temperature :
150°C TJ
Operating Temperature Classification :
Military
Product Status :
Active
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Operating Temp Range :
-55C to 150C
Current - Collector Cutoff (Max) :
10μA ICBO
Supplier Device Package :
TO-220F
Mounting Type :
Through Hole
Number of Terminals :
3
Package Type :
TO-220F
Collector Current (DC) :
4(A)
JESD-30 Code :
R-PSFM-T3
Max Collector Current :
4A
Max Power Dissipation :
25W
Additional Feature :
BUILT IN BIAS RESISTANCE RATIO IS 0.325
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Case Connection :
Isolated
Manufacturer :
Sanken Electric Co Ltd
Power - Max :
25W
Transistor Element Material :
SILICON
Number of Elements :
1
Polarity/Channel Type :
PNP
Maximum Collector Cut-off Current :
10
Package Shape :
RECTANGULAR
Collector-Emitter Voltage :
60(V)
Polarity :
PNP
Surface Mount :
No
Base-Emitter Saturation Voltage (Max) :
2(V)
Collector-Base Voltage :
60(V)
JEDEC-95 Code :
TO-220AB
Package :
Bulk
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 6mA, 3A
Pbfree Code :
yes
DC Current Gain-Min (hFE) :
2000
Collector Emitter Breakdown Voltage :
60V
Current - Collector (Ic) (Max) :
4 A
Datasheets
2SB1257
Introducing Transistors - Bipolar (BJT) - Single Sanken Electric Co., Ltd. 2SB1257 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-220-3 Full Pack, Operating Temperature:150°C TJ, Mounting Type:Through Hole, 2SB1257 pinout, 2SB1257 datasheet PDF, 2SB1257 amp .Beyond Transistors - Bipolar (BJT) - Single Sanken Electric Co., Ltd. 2SB1257 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Sanken Electric Co., Ltd. 2SB1257


PNP - Darlington 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON PNP TO-220-3 Full Pack Bulk Through Hole

2SB1257 Overview


In this device, the DC current gain is 2000 @ 3A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 6mA, 3A.200MHz is present in the transition frequency.Supplier device package TO-220F comes with the product.Voltage of maximal collector-emitter is set to 60 V.The device exhibits a collector-emitter breakdown at 60 V.Maximum collector currents can be below 4A volts.

2SB1257 Features


the DC current gain for this device is 2000 @ 3A 4V
the vce saturation(Max) is 1.5V @ 6mA, 3A
a transition frequency of 200MHz
the supplier device package of TO-220F


2SB1257 Applications


There are a lot of Sanken
2SB1257 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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