2SB1257
- Mfr.Part #
- 2SB1257
- Manufacturer
- Sanken Electric Co., Ltd.
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS PNP DARL 60V 4A TO220F
- Stock
- 6,216
- In Stock :
- 6,216
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- Manufacturer :
- Sanken Electric Co., Ltd.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation-Max (Abs) :
- 25 W
- Configuration :
- Single
- Collector-Base Voltage :
- 60(V)
- Collector-Emitter Voltage-Max :
- 60 V
- Mount :
- Through Hole
- Published :
- 2007
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 3A 4V
- Terminal Form :
- THROUGH-HOLE
- Operating Temp Range :
- -55C to 150C
- JESD-30 Code :
- R-PSFM-T3
- JEDEC-95 Code :
- TO-220AB
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Polarity/Channel Type :
- PNP
- Additional Feature :
- BUILT IN BIAS RESISTANCE RATIO IS 0.325
- Package :
- Bulk
- DC Current Gain :
- 2000@3000MA
- Packaging :
- Bulk
- DC Current Gain-Min (hFE) :
- 2000
- Rad Hardened :
- No
- Current - Collector (Ic) (Max) :
- 4 A
- Base-Emitter Saturation Voltage (Max) :
- 2(V)
- Factory Lead Time :
- 12 Weeks
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Power - Max :
- 25W
- Terminal Position :
- Single
- Number of Terminations :
- 3
- Package / Case :
- TO-220-3 Full Pack
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 25W
- Pbfree Code :
- yes
- Manufacturer :
- Sanken Electric Co Ltd
- Product Status :
- Active
- Transition Frequency :
- 200MHz
- Transistor Type :
- PNP - Darlington
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 6mA, 3A
- Reach Compliance Code :
- Unknown
- Number of Elements :
- 1
- Collector-Emitter Voltage :
- 60(V)
- Voltage - Collector Emitter Breakdown (Max) :
- 60 V
- Mounting :
- Through Hole
- Series :
- -
- Collector Emitter Voltage (VCEO) :
- 1.5V
- Collector Current-Max (IC) :
- 4 A
- Package Type :
- TO-220F
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Maximum Collector Cut-off Current :
- 10
- RoHS Status :
- RoHS Compliant
- Supplier Device Package :
- TO-220F
- Surface Mount :
- No
- Number of Terminals :
- 3
- Operating Temperature Classification :
- Military
- Qualification Status :
- Not Qualified
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Collector Emitter Breakdown Voltage :
- 60V
- Collector Current (DC) :
- 4(A)
- Polarity :
- PNP
- Frequency - Transition :
- 150MHz
- Case Connection :
- Isolated
- Package Shape :
- RECTANGULAR
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 25(W)
- Pin Count :
- 3
- Emitter-Base Voltage :
- 6(V)
- Max Collector Current :
- 4A
- Datasheets
- 2SB1257

PNP - Darlington 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON PNP TO-220-3 Full Pack Bulk Through Hole
2SB1257 Overview
In this device, the DC current gain is 2000 @ 3A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 6mA, 3A.200MHz is present in the transition frequency.Supplier device package TO-220F comes with the product.Voltage of maximal collector-emitter is set to 60 V.The device exhibits a collector-emitter breakdown at 60 V.Maximum collector currents can be below 4A volts.
2SB1257 Features
the DC current gain for this device is 2000 @ 3A 4V
the vce saturation(Max) is 1.5V @ 6mA, 3A
a transition frequency of 200MHz
the supplier device package of TO-220F
2SB1257 Applications
There are a lot of Sanken
2SB1257 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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