2SB1216T-TL-H
- Mfr.Part #
- 2SB1216T-TL-H
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 100V 4A TPFA
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 120V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Transistor Application :
- SWITCHING
- Halogen Free :
- Halogen Free
- Factory Lead Time :
- 8 Weeks
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Operating Temperature :
- 150°C TJ
- Frequency :
- 180MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- yes
- Transition Frequency :
- 130MHz
- Transistor Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 100V
- Terminal Form :
- Gull wing
- Base Part Number :
- 2SB1216
- Lead Free :
- Lead Free
- hFE Min :
- 70
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Emitter Breakdown Voltage :
- 100V
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Polarity/Channel Type :
- PNP
- Published :
- 2012
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- JESD-30 Code :
- R-PSSO-G2
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Terminal Position :
- Single
- Pin Count :
- 3
- Mounting Type :
- Surface Mount
- Number of Pins :
- 3
- Max Power Dissipation :
- 1W
- RoHS Status :
- RoHS Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 200mA, 2A
- Frequency - Transition :
- 130MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA 5V
- Number of Terminations :
- 2
- ECCN Code :
- EAR99
- Max Collector Current :
- 4A
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e6
- Case Connection :
- COLLECTOR
- Configuration :
- Single
- Power Dissipation :
- 1W
- Datasheets
- 2SB1216T-TL-H
PNP 150°C TJ 1μA ICBO 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SB1216T-TL-H Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 500mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 130MHz.During maximum operation, collector current can be as low as 4A volts.
2SB1216T-TL-H Features
the DC current gain for this device is 200 @ 500mA 5V
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 130MHz
2SB1216T-TL-H Applications
There are a lot of ON Semiconductor
2SB1216T-TL-H applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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