2SB1215T-E
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- Mfr.Part #
- 2SB1215T-E
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 3A TP
- Stock
- 2,397
- In Stock ：
- 2,397
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 100V
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 100V
- Base Part Number :
- 2SB1215
- Surface Mount :
- No
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 150mA, 1.5A
- Reach Compliance Code :
- not_compliant
- JESD-609 Code :
- e6
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Bulk
- Pbfree Code :
- yes
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Lead Free :
- Lead Free
- Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- -6V
- Number of Pins :
- 3
- hFE Min :
- 70
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA 5V
- Frequency - Transition :
- 130MHz
- Operating Temperature :
- 150°C TJ
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- PNP
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Factory Lead Time :
- 4 Weeks
- Contact Plating :
- Tin
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 120V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Max Power Dissipation :
- 1W
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Polarity/Channel Type :
- PNP
- Published :
- 2012
- Max Collector Current :
- 3A
- Power - Max :
- 1W
- Datasheets
- 2SB1215T-E
PNP 150°C TJ 1μA ICBO SILICON PNP TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole
2SB1215T-E Overview
In this device, the DC current gain is 200 @ 500mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 150mA, 1.5A.With the emitter base voltage set at -6V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
2SB1215T-E Features
the DC current gain for this device is 200 @ 500mA 5V
the vce saturation(Max) is 500mV @ 150mA, 1.5A
the emitter base voltage is kept at -6V
2SB1215T-E Applications
There are a lot of ON Semiconductor
2SB1215T-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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