2SB1215T-E
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- Mfr.Part #
- 2SB1215T-E
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 3A TP
- Stock
- 2,397
- In Stock ：
- 2,397
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 500mA 5V
- Collector Base Voltage (VCBO) :
- 120V
- Transistor Type :
- PNP
- Contact Plating :
- Tin
- Packaging :
- Bulk
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 150mA, 1.5A
- Reach Compliance Code :
- not_compliant
- Factory Lead Time :
- 4 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- -6V
- Max Power Dissipation :
- 1W
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 100V
- Lead Free :
- Lead Free
- Published :
- 2012
- Operating Temperature :
- 150°C TJ
- Configuration :
- Single
- hFE Min :
- 70
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power - Max :
- 1W
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Frequency - Transition :
- 130MHz
- Max Collector Current :
- 3A
- Polarity/Channel Type :
- PNP
- Number of Pins :
- 3
- Base Part Number :
- 2SB1215
- JESD-609 Code :
- e6
- Collector Emitter Breakdown Voltage :
- 100V
- Surface Mount :
- No
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Datasheets
- 2SB1215T-E
PNP 150°C TJ 1μA ICBO SILICON PNP TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole
2SB1215T-E Overview
In this device, the DC current gain is 200 @ 500mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 150mA, 1.5A.With the emitter base voltage set at -6V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
2SB1215T-E Features
the DC current gain for this device is 200 @ 500mA 5V
the vce saturation(Max) is 500mV @ 150mA, 1.5A
the emitter base voltage is kept at -6V
2SB1215T-E Applications
There are a lot of ON Semiconductor
2SB1215T-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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