2SB1215S-TL-E
- Mfr.Part #
- 2SB1215S-TL-E
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 100V 3A TPFA
- Stock
- 6,177
- In Stock :
- 6,177
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Collector Base Voltage (VCBO) :
- 120V
- Max Collector Current :
- 3A
- Polarity/Channel Type :
- PNP
- Collector Emitter Saturation Voltage :
- -200mV
- Published :
- 2011
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Collector Emitter Voltage (VCEO) :
- 100V
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 5 days ago)
- Number of Pins :
- 3
- Number of Elements :
- 1
- JESD-609 Code :
- e6
- Transistor Type :
- PNP
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Base Part Number :
- 2SB1215
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 150mA, 1.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 140 @ 500mA 5V
- Lead Free :
- Lead Free
- Factory Lead Time :
- 7 Weeks
- Operating Temperature :
- 150°C TJ
- Max Power Dissipation :
- 1W
- Gain Bandwidth Product :
- 130MHz
- Packaging :
- Tape and Reel (TR)
- Surface Mount :
- yes
- Frequency :
- 130MHz
- Power Dissipation :
- 1W
- Radiation Hardening :
- No
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Emitter Base Voltage (VEBO) :
- -6V
- Collector Emitter Breakdown Voltage :
- 100V
- Pin Count :
- 3
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- 2SB1215S-TL-E

PNP 150°C TJ 1μA ICBO 1 Elements PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SB1215S-TL-E Overview
This device has a DC current gain of 140 @ 500mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -200mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at -6V to achieve high efficiency.The maximum collector current is 3A volts.
2SB1215S-TL-E Features
the DC current gain for this device is 140 @ 500mA 5V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 500mV @ 150mA, 1.5A
the emitter base voltage is kept at -6V
2SB1215S-TL-E Applications
There are a lot of ON Semiconductor
2SB1215S-TL-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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