2SB1215S-H
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- Mfr.Part #
- 2SB1215S-H
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 3A TP
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency - Transition :
- 130MHz
- Base Part Number :
- 2SB1215
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 140 @ 500mA 5V
- Mounting Type :
- Through Hole
- Surface Mount :
- No
- Polarity/Channel Type :
- PNP
- Factory Lead Time :
- 4 Weeks
- Max Power Dissipation :
- 1W
- JESD-609 Code :
- e6
- Collector Emitter Voltage (VCEO) :
- 500mV
- hFE Min :
- 70
- Published :
- 2012
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Pbfree Code :
- yes
- Packaging :
- Bulk
- RoHS Status :
- RoHS Compliant
- Collector Emitter Breakdown Voltage :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 3A
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Power - Max :
- 1W
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 150mA, 1.5A
- Transistor Type :
- PNP
- Emitter Base Voltage (VEBO) :
- -6V
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Configuration :
- Single
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Datasheets
- 2SB1215S-H
PNP 150°C TJ 1μA ICBO PNP TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole
2SB1215S-H Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 140 @ 500mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 150mA, 1.5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -6V.During maximum operation, collector current can be as low as 3A volts.
2SB1215S-H Features
the DC current gain for this device is 140 @ 500mA 5V
the vce saturation(Max) is 500mV @ 150mA, 1.5A
the emitter base voltage is kept at -6V
2SB1215S-H Applications
There are a lot of ON Semiconductor
2SB1215S-H applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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