2SB1215S-E

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Mfr.Part #
2SB1215S-E
Manufacturer
onsemi
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
TRANS PNP 100V 3A TP
Stock
1,000
In Stock :
1,000

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Emitter Base Voltage (VEBO) :
-6V
Packaging :
Bulk
Collector Emitter Breakdown Voltage :
100V
Power - Max :
1W
Mounting Type :
Through Hole
Pin Count :
3
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Base Part Number :
2SB1215
hFE Min :
70
Transistor Type :
PNP
Collector Emitter Voltage (VCEO) :
500mV
RoHS Status :
ROHS3 Compliant
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Lead Free :
Lead Free
Factory Lead Time :
2 Weeks
Reach Compliance Code :
not_compliant
Operating Temperature :
150°C TJ
Frequency - Transition :
130MHz
Published :
1997
Pbfree Code :
yes
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Pins :
3
DC Current Gain (hFE) (Min) @ Ic, Vce :
140 @ 500mA 5V
Max Collector Current :
3A
Vce Saturation (Max) @ Ib, Ic :
500mV @ 150mA, 1.5A
Max Power Dissipation :
1W
Current - Collector Cutoff (Max) :
1μA ICBO
ECCN Code :
EAR99
Datasheets
2SB1215S-E
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SB1215S-E from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Base Part Number:2SB1215, Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Operating Temperature:150°C TJ, Number of Pins:3, 2SB1215S-E pinout, 2SB1215S-E datasheet PDF, 2SB1215S-E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SB1215S-E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SB1215S-E


PNP 150°C TJ 1μA ICBO TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole

2SB1215S-E Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 140 @ 500mA 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at -6V can result in a high level of efficiency.When collector current reaches its maximum, it can reach 3A volts.

2SB1215S-E Features


the DC current gain for this device is 140 @ 500mA 5V
the vce saturation(Max) is 500mV @ 150mA, 1.5A
the emitter base voltage is kept at -6V


2SB1215S-E Applications


There are a lot of ON Semiconductor
2SB1215S-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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