2SB1204S-TL-E

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Mfr.Part #
2SB1204S-TL-E
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
TRANS PNP 50V 8A TPFA
Stock
2,955
In Stock :
2,955

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
JESD-609 Code :
e6
Max Power Dissipation :
1W
Collector Emitter Saturation Voltage :
-500mV
Height :
2.3mm
Radiation Hardening :
No
Collector Emitter Voltage (VCEO) :
-500mV
Current - Collector Cutoff (Max) :
1μA ICBO
Collector Base Voltage (VCBO) :
60V
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins :
3
DC Current Gain (hFE) (Min) @ Ic, Vce :
140 @ 500mA 2V
Number of Elements :
1
Mounting Type :
Surface Mount
Frequency :
130MHz
Lifecycle Status :
ACTIVE (Last Updated: 2 days ago)
Length :
6.5mm
Element Configuration :
Single
Polarity/Channel Type :
PNP
hFE Min :
140
Factory Lead Time :
13 Weeks
Max Breakdown Voltage :
50V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lead Free :
Lead Free
Surface Mount :
yes
Collector Emitter Breakdown Voltage :
50V
Pin Count :
3
Pbfree Code :
yes
Base Part Number :
2SB1204
RoHS Status :
ROHS3 Compliant
Width :
5.5mm
ECCN Code :
EAR99
Emitter Base Voltage (VEBO) :
6V
Gain Bandwidth Product :
130MHz
Published :
2011
Vce Saturation (Max) @ Ib, Ic :
500mV @ 200mA, 4A
Operating Temperature :
150°C TJ
Packaging :
Tape and Reel (TR)
Terminal Finish :
Tin/Bismuth (Sn/Bi)
Max Collector Current :
8A
Power Dissipation :
1W
Transistor Type :
PNP
Datasheets
2SB1204S-TL-E
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SB1204S-TL-E from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Pins:3, Mounting Type:Surface Mount, Base Part Number:2SB1204, Operating Temperature:150°C TJ, 2SB1204S-TL-E pinout, 2SB1204S-TL-E datasheet PDF, 2SB1204S-TL-E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SB1204S-TL-E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SB1204S-TL-E


PNP 150°C TJ 1μA ICBO 1 Elements PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount

2SB1204S-TL-E Overview


DC current gain in this device equals 140 @ 500mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -500mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 200mA, 4A.An emitter's base voltage can be kept at 6V to gain high efficiency.Breakdown input voltage is 50V volts.In extreme cases, the collector current can be as low as 8A volts.

2SB1204S-TL-E Features


the DC current gain for this device is 140 @ 500mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 200mA, 4A
the emitter base voltage is kept at 6V


2SB1204S-TL-E Applications


There are a lot of ON Semiconductor
2SB1204S-TL-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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