2SB1203T-E

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Mfr.Part #
2SB1203T-E
Manufacturer
onsemi
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
TRANS PNP 50V 5A TP
Stock
42,841
In Stock :
42,841

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Emitter Breakdown Voltage :
50V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Type :
PNP
Mounting Type :
Through Hole
Number of Terminations :
3
Packaging :
Bulk
JESD-609 Code :
e6
Terminal Finish :
Tin/Bismuth (Sn/Bi)
Current - Collector Cutoff (Max) :
1μA ICBO
Pbfree Code :
yes
Collector Emitter Voltage (VCEO) :
50V
Reach Compliance Code :
not_compliant
RoHS Status :
ROHS3 Compliant
Case Connection :
COLLECTOR
Emitter Base Voltage (VEBO) :
-6V
Transistor Application :
SWITCHING
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Configuration :
Single
Factory Lead Time :
6 Weeks
Published :
2011
hFE Min :
70
Transition Frequency :
130MHz
Operating Temperature :
150°C TJ
Number of Pins :
3
Power - Max :
1W
Transistor Element Material :
SILICON
Lead Free :
Lead Free
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 500mA 2V
Terminal Position :
Single
Max Collector Current :
5A
Polarity/Channel Type :
PNP
Base Part Number :
2SB1203
Surface Mount :
No
Collector Base Voltage (VCBO) :
60V
Max Power Dissipation :
1W
Frequency - Transition :
130MHz
Vce Saturation (Max) @ Ib, Ic :
550mV @ 150mA, 3A
Number of Elements :
1
Pin Count :
3
Datasheets
2SB1203T-E
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SB1203T-E from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Operating Temperature:150°C TJ, Number of Pins:3, Base Part Number:2SB1203, 2SB1203T-E pinout, 2SB1203T-E datasheet PDF, 2SB1203T-E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SB1203T-E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SB1203T-E


PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole

2SB1203T-E Overview


DC current gain in this device equals 200 @ 500mA 2V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 550mV @ 150mA, 3A.An emitter's base voltage can be kept at -6V to gain high efficiency.As a result, the part has a transition frequency of 130MHz.In extreme cases, the collector current can be as low as 5A volts.

2SB1203T-E Features


the DC current gain for this device is 200 @ 500mA 2V
the vce saturation(Max) is 550mV @ 150mA, 3A
the emitter base voltage is kept at -6V
a transition frequency of 130MHz


2SB1203T-E Applications


There are a lot of ON Semiconductor
2SB1203T-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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