2SB1203S-H
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- Mfr.Part #
- 2SB1203S-H
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS PNP 50V 5A TP
- Stock
- 7,865
- In Stock ：
- 7,865
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Bulk
- Supplier Device Package :
- TP
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Mounting Type :
- Through Hole
- Current - Collector (Ic) (Max) :
- 5A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 140 @ 500mA 2V
- Power - Max :
- 1W
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- RoHS Status :
- Non-RoHS Compliant
- Frequency - Transition :
- 130MHz
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 550mV @ 150mA, 3A
- Datasheets
- 2SB1203S-H
PNP 150°C TJ 1μA ICBO TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole
2SB1203S-H Overview
This device has a DC current gain of 140 @ 500mA 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 550mV @ 150mA, 3A means Ic has reached its maximum value(saturated).Product package TP comes from the supplier.Collector Emitter Breakdown occurs at 50VV - Maximum voltage.
2SB1203S-H Features
the DC current gain for this device is 140 @ 500mA 2V
the vce saturation(Max) is 550mV @ 150mA, 3A
the supplier device package of TP
2SB1203S-H Applications
There are a lot of Rochester Electronics, LLC
2SB1203S-H applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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