2SB1184TLR
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- Mfr.Part #
- 2SB1184TLR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 50V 3A CPT3
- Stock
- 616
- In Stock ：
- 616
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Continuous Collector Current :
- -3A
- Collector Base Voltage (VCBO) :
- 60V
- JESD-30 Code :
- R-PSSO-G2
- Gain Bandwidth Product :
- 70MHz
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e2
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Pin Count :
- 3
- Collector Emitter Breakdown Voltage :
- 50V
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- 2SB1184
- Polarity/Channel Type :
- PNP
- Radiation Hardening :
- No
- Current Rating :
- -3A
- Max Collector Current :
- 3A
- Max Power Dissipation :
- 1W
- Transistor Application :
- SWITCHING
- hFE Min :
- 180
- Emitter Base Voltage (VEBO) :
- 5V
- Factory Lead Time :
- 17 Weeks
- Max Breakdown Voltage :
- 50V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 1W
- Number of Pins :
- 3
- Transistor Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 500mA 3V
- Frequency :
- 70MHz
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 200mA, 2A
- Published :
- 2002
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 2
- Lead Free :
- Lead Free
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- Terminal Finish :
- TIN COPPER
- Collector Emitter Voltage (VCEO) :
- 50V
- Mount :
- Surface Mount
- Contact Plating :
- Copper, Tin
- Transition Frequency :
- 70MHz
- Voltage - Rated DC :
- -50V
- Datasheets
- 2SB1184TLR
PNP 150°C TJ 1μA ICBO 1 Elements 2 Terminations SILICON PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SB1184TLR Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 180 @ 500mA 3V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 200mA, 2A.Continuous collector voltages of -3A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -3A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 70MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 3A volts.
2SB1184TLR Features
the DC current gain for this device is 180 @ 500mA 3V
the vce saturation(Max) is 1V @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 70MHz
2SB1184TLR Applications
There are a lot of ROHM Semiconductor
2SB1184TLR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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