2SB1143T
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- Mfr.Part #
- 2SB1143T
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP 50V 4A TO126ML
- Stock
- 26,053
- In Stock ：
- 26,053
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 150MHz
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Package / Case :
- TO-225AA, TO-126-3
- Transistor Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- Contact Plating :
- Tin
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Max Breakdown Voltage :
- 50V
- Operating Temperature :
- 150°C TJ
- Pin Count :
- 3
- Max Collector Current :
- 4A
- Surface Mount :
- No
- Published :
- 2003
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 100mA, 2A
- Transition Frequency :
- 150MHz
- Length :
- 8mm
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- RoHS Status :
- RoHS Compliant
- Packaging :
- Bulk
- hFE Min :
- 100
- Height :
- 11mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 3.3mm
- Max Frequency :
- 150MHz
- Collector Base Voltage (VCBO) :
- 60V
- Continuous Collector Current :
- 4A
- Collector Emitter Breakdown Voltage :
- 50V
- Emitter Base Voltage (VEBO) :
- 6V
- Pbfree Code :
- yes
- Polarity/Channel Type :
- PNP
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Max Power Dissipation :
- 1.5W
- Collector Emitter Saturation Voltage :
- -700mV
- Collector Emitter Voltage (VCEO) :
- 50V
- Datasheets
- 2SB1143T
PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Bulk Through Hole
2SB1143T Overview
This device has a DC current gain of 200 @ 100mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -700mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 4A is necessary for high efficiency.The base voltage of the emitter can be kept at 6V to achieve high efficiency.In this part, there is a transition frequency of 150MHz.As a result, it can handle voltages as low as 50V volts.The maximum collector current is 4A volts.
2SB1143T Features
the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -700mV
the vce saturation(Max) is 700mV @ 100mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz
2SB1143T Applications
There are a lot of ON Semiconductor
2SB1143T applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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