2SB1132T100P
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- Mfr.Part #
- 2SB1132T100P
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 32V 1A MPT3
- Stock
- 8,399
- In Stock ：
- 8,399
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 500mV
- Polarity/Channel Type :
- PNP
- Current Rating :
- -1A
- Base Part Number :
- 2SB1132
- Time@Peak Reflow Temperature-Max (s) :
- 10
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-243AA
- Gain Bandwidth Product :
- 150MHz
- Published :
- 2004
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 82 @ 100mA 3V
- Number of Terminations :
- 3
- Terminal Form :
- Flat
- Voltage - Rated DC :
- -32V
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- HTS Code :
- 8541.21.00.75
- Collector Emitter Breakdown Voltage :
- 32V
- Lead Free :
- Lead Free
- VCEsat-Max :
- 0.5 V
- JESD-609 Code :
- e2
- Number of Pins :
- 3
- Contact Plating :
- Copper, Tin
- Terminal Finish :
- Tin/Copper (Sn/Cu)
- Transistor Type :
- PNP
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Current - Collector (Ic) (Max) :
- 1A
- Max Power Dissipation :
- 2W
- Mounting Type :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- -5V
- Max Collector Current :
- 1A
- Collector Emitter Saturation Voltage :
- -200mV
- Transistor Element Material :
- SILICON
- Pbfree Code :
- yes
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Transistor Application :
- AMPLIFIER
- hFE Min :
- 120
- Number of Elements :
- 1
- Continuous Collector Current :
- -1A
- Transition Frequency :
- 150MHz
- Operating Temperature :
- 150°C TJ
- Collector Base Voltage (VCBO) :
- -40V
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Surface Mount
- Case Connection :
- COLLECTOR
- Element Configuration :
- Single
- Datasheets
- 2SB1132T100P
PNP 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2SB1132T100P Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 82 @ 100mA 3V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -200mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.Single BJT transistor is recommended to keep the continuous collector voltage at -1A in order to achieve high efficiency.The emitter base voltage can be kept at -5V for high efficiency.The current rating of this fuse is -1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 150MHz.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
2SB1132T100P Features
the DC current gain for this device is 82 @ 100mA 3V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 150MHz
2SB1132T100P Applications
There are a lot of ROHM Semiconductor
2SB1132T100P applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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