2SB1124S-TD-H

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

hFE Min :

100

Operating Temperature :

150°C TJ

Package / Case :

TO-243AA

RoHS Status :

RoHS Compliant

Polarity/Channel Type :

PNP

Transistor Type :

PNP

Published :

2012

Vce Saturation (Max) @ Ib, Ic :

700mV @ 100mA, 2A

Terminal Finish :

Tin/Bismuth (Sn/Bi)

Collector Emitter Breakdown Voltage :

50V

Packaging :

Tape and Reel (TR)

Number of Terminations :

3

JESD-609 Code :

e6

Collector Base Voltage (VCBO) :

60V

Pbfree Code :

yes

Power - Max :

500mW

Current - Collector Cutoff (Max) :

1μA ICBO

Transistor Element Material :

SILICON

DC Current Gain (hFE) (Min) @ Ic, Vce :

140 @ 100mA 2V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

HTS Code :

8541.21.00.75

Halogen Free :

Halogen Free

Configuration :

Single

Mounting Type :

Surface Mount

Number of Elements :

1

Emitter Base Voltage (VEBO) :

6V

Surface Mount :

yes

Transition Frequency :

150MHz

Number of Pins :

3

Case Connection :

COLLECTOR

Terminal Position :

Single

Factory Lead Time :

18 Weeks

ECCN Code :

EAR99

Max Collector Current :

3A

Pin Count :

3

Lead Free :

Lead Free

Frequency - Transition :

150MHz

Terminal Form :

Flat

Base Part Number :

2SB1124

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 day ago)

Max Power Dissipation :

500mW

Collector Emitter Voltage (VCEO) :

50V