2SB1124S-TD-H
- Mfr.Part #
- 2SB1124S-TD-H
- Manufacturer
- onsemi
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 50V 3A PCP
- Stock
- 37,216
- In Stock :
- 37,216
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 140 @ 100mA 2V
- RoHS Status :
- RoHS Compliant
- Transition Frequency :
- 150MHz
- Number of Terminations :
- 3
- hFE Min :
- 100
- Terminal Form :
- Flat
- Max Power Dissipation :
- 500mW
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- JESD-609 Code :
- e6
- Collector Base Voltage (VCBO) :
- 60V
- Max Collector Current :
- 3A
- Transistor Application :
- SWITCHING
- Surface Mount :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 700mV @ 100mA, 2A
- Halogen Free :
- Halogen Free
- HTS Code :
- 8541.21.00.75
- Power - Max :
- 500mW
- Pbfree Code :
- yes
- Package / Case :
- TO-243AA
- Transistor Element Material :
- SILICON
- Configuration :
- Single
- Base Part Number :
- 2SB1124
- Operating Temperature :
- 150°C TJ
- Factory Lead Time :
- 18 Weeks
- Number of Pins :
- 3
- Published :
- 2012
- Collector Emitter Voltage (VCEO) :
- 50V
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 50V
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Single
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Transistor Type :
- PNP
- Emitter Base Voltage (VEBO) :
- 6V
- Mounting Type :
- Surface Mount
- Case Connection :
- COLLECTOR
- Frequency - Transition :
- 150MHz
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Datasheets
- 2SB1124S-TD-H

PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2SB1124S-TD-H Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 140 @ 100mA 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 100mA, 2A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 150MHz is present in the part.Collector current can be as low as 3A volts at its maximum.
2SB1124S-TD-H Features
the DC current gain for this device is 140 @ 100mA 2V
the vce saturation(Max) is 700mV @ 100mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz
2SB1124S-TD-H Applications
There are a lot of ON Semiconductor
2SB1124S-TD-H applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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