2SB1124S-TD-H

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Mfr.Part #
2SB1124S-TD-H
Manufacturer
onsemi
Package / Case
TO-243AA
Datasheet
Download
Description
TRANS PNP 50V 3A PCP
Stock
37,216
In Stock :
37,216

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Lead Free :
Lead Free
Polarity/Channel Type :
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce :
140 @ 100mA 2V
RoHS Status :
RoHS Compliant
Transition Frequency :
150MHz
Number of Terminations :
3
hFE Min :
100
Terminal Form :
Flat
Max Power Dissipation :
500mW
Terminal Finish :
Tin/Bismuth (Sn/Bi)
JESD-609 Code :
e6
Collector Base Voltage (VCBO) :
60V
Max Collector Current :
3A
Transistor Application :
SWITCHING
Surface Mount :
yes
Vce Saturation (Max) @ Ib, Ic :
700mV @ 100mA, 2A
Halogen Free :
Halogen Free
HTS Code :
8541.21.00.75
Power - Max :
500mW
Pbfree Code :
yes
Package / Case :
TO-243AA
Transistor Element Material :
SILICON
Configuration :
Single
Base Part Number :
2SB1124
Operating Temperature :
150°C TJ
Factory Lead Time :
18 Weeks
Number of Pins :
3
Published :
2012
Collector Emitter Voltage (VCEO) :
50V
Packaging :
Tape and Reel (TR)
Collector Emitter Breakdown Voltage :
50V
Number of Elements :
1
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Position :
Single
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 1 day ago)
Transistor Type :
PNP
Emitter Base Voltage (VEBO) :
6V
Mounting Type :
Surface Mount
Case Connection :
COLLECTOR
Frequency - Transition :
150MHz
Current - Collector Cutoff (Max) :
1μA ICBO
Pin Count :
3
ECCN Code :
EAR99
Datasheets
2SB1124S-TD-H
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SB1124S-TD-H from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-243AA, Base Part Number:2SB1124, Operating Temperature:150°C TJ, Number of Pins:3, Mounting Type:Surface Mount, 2SB1124S-TD-H pinout, 2SB1124S-TD-H datasheet PDF, 2SB1124S-TD-H amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SB1124S-TD-H ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SB1124S-TD-H


PNP 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount

2SB1124S-TD-H Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 140 @ 100mA 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 100mA, 2A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.A transition frequency of 150MHz is present in the part.Collector current can be as low as 3A volts at its maximum.

2SB1124S-TD-H Features


the DC current gain for this device is 140 @ 100mA 2V
the vce saturation(Max) is 700mV @ 100mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz


2SB1124S-TD-H Applications


There are a lot of ON Semiconductor
2SB1124S-TD-H applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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