2SA1955FVBTPL3Z
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- Mfr.Part #
- 2SA1955FVBTPL3Z
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- SOT-723
- Datasheet
- Download
- Description
- TRANS PNP 12V 0.4A VESM
- Stock
- 2,695
- In Stock ：
- 2,695
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Cut Tape (CT)
- Collector Emitter Saturation Voltage :
- -30mV
- Transistor Type :
- PNP
- Max Breakdown Voltage :
- 12V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 10mA 2V
- Operating Temperature :
- 150°C TJ
- Package / Case :
- SOT-723
- Frequency - Transition :
- 130MHz
- Element Configuration :
- Single
- Power - Max :
- 100mW
- Collector Emitter Breakdown Voltage :
- 12V
- Current - Collector (Ic) (Max) :
- 400mA
- Supplier Device Package :
- VESM
- Voltage - Collector Emitter Breakdown (Max) :
- 12V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Collector Current :
- 400mA
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 200mA
- Mount :
- Surface Mount
- Max Power Dissipation :
- 100mW
- Mounting Type :
- Surface Mount
- Published :
- 2005
- Collector Emitter Voltage (VCEO) :
- 250mV
- RoHS Status :
- RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity :
- PNP
- hFE Min :
- 300
- Datasheets
- 2SA1955FVBTPL3Z
PNP 150°C TJ 100nA ICBO SOT-723 Cut Tape (CT) Surface Mount
2SA1955FVBTPL3Z Overview
In this device, the DC current gain is 300 @ 10mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -30mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 250mV @ 10mA, 200mA.An input voltage of 12V volts is the breakdown voltage.Supplier device package VESM comes with the product.The device exhibits a collector-emitter breakdown at 12V.Maximum collector currents can be below 400mA volts.
2SA1955FVBTPL3Z Features
the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of -30mV
the vce saturation(Max) is 250mV @ 10mA, 200mA
the supplier device package of VESM
2SA1955FVBTPL3Z Applications
There are a lot of Toshiba Semiconductor and Storage
2SA1955FVBTPL3Z applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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