2SA1954BTE85LF
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- Mfr.Part #
- 2SA1954BTE85LF
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS PNP 12V 0.5A SC70
- Stock
- 13,000
- In Stock ：
- 13,000
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector (Ic) (Max) :
- 500mA
- Emitter Base Voltage (VEBO) :
- -5V
- Frequency - Transition :
- 130MHz
- Collector Emitter Voltage (VCEO) :
- 250mV
- Element Configuration :
- Single
- Transistor Type :
- PNP
- Power - Max :
- 100mW
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 200mA
- Published :
- 2009
- Mounting Type :
- Surface Mount
- Packaging :
- Cut Tape (CT)
- Polarity :
- PNP
- Supplier Device Package :
- USM
- Gain Bandwidth Product :
- 130MHz
- Package / Case :
- SC-70, SOT-323
- Max Power Dissipation :
- 100mW
- Collector Base Voltage (VCBO) :
- -15V
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Operating Temperature :
- 125°C TJ
- RoHS Status :
- RoHS Compliant
- hFE Min :
- 300
- Collector Emitter Saturation Voltage :
- -110mV
- Max Breakdown Voltage :
- 12V
- Collector Emitter Breakdown Voltage :
- 12V
- Max Collector Current :
- 500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 500 @ 10mA 2V
- Voltage - Collector Emitter Breakdown (Max) :
- 12V
- Datasheets
- 2SA1954BTE85LF
PNP 125°C TJ 100nA ICBO SC-70, SOT-323 Cut Tape (CT) Surface Mount
2SA1954BTE85LF Overview
In this device, the DC current gain is 500 @ 10mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -110mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 250mV @ 10mA, 200mA.With the emitter base voltage set at -5V, an efficient operation can be achieved.Input voltage breakdown is available at 12V volts.Product comes in the supplier's device package USM.There is a 12V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
2SA1954BTE85LF Features
the DC current gain for this device is 500 @ 10mA 2V
a collector emitter saturation voltage of -110mV
the vce saturation(Max) is 250mV @ 10mA, 200mA
the emitter base voltage is kept at -5V
the supplier device package of USM
2SA1954BTE85LF Applications
There are a lot of Toshiba Semiconductor and Storage
2SA1954BTE85LF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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