2SA1943RTU
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- Mfr.Part #
- 2SA1943RTU
- Manufacturer
- onsemi
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- TRANS PNP 250V 17A TO264-3
- Stock
- 1,366
- In Stock ：
- 1,366
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-264-3, TO-264AA
- Collector Base Voltage (VCBO) :
- -250V
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Frequency :
- 30MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- PNP
- Emitter Base Voltage (VEBO) :
- -5V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Mount :
- Through Hole
- Operating Temperature :
- -50°C~150°C TJ
- Number of Pins :
- 3
- Power Dissipation :
- 150W
- Current - Collector Cutoff (Max) :
- 5μA ICBO
- Weight :
- 6.756g
- Max Power Dissipation :
- 150W
- Published :
- 2015
- Transistor Application :
- AMPLIFIER
- Collector Emitter Breakdown Voltage :
- 250V
- Transistor Type :
- PNP
- hFE Min :
- 55
- Contact Plating :
- Tin
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Transition Frequency :
- 30MHz
- Factory Lead Time :
- 2 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 55 @ 1A 5V
- Gain Bandwidth Product :
- 30MHz
- Max Collector Current :
- 17A
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 800mA, 8A
- Collector Emitter Voltage (VCEO) :
- 250V
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Base Part Number :
- 2SA1943
- Pbfree Code :
- yes
- Datasheets
- 2SA1943RTU
2SA1943RTU Documents
PNP -50°C~150°C TJ 5μA ICBO 1 Elements 3 Terminations SILICON PNP TO-264-3, TO-264AA Tube Through Hole
2SA1943RTU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 55 @ 1A 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 800mA, 8A.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.A transition frequency of 30MHz is present in the part.Collector current can be as low as 17A volts at its maximum.
2SA1943RTU Features
the DC current gain for this device is 55 @ 1A 5V
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at -5V
a transition frequency of 30MHz
2SA1943RTU Applications
There are a lot of ON Semiconductor
2SA1943RTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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