2SA1943-O(Q)

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Mfr.Part #
2SA1943-O(Q)
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
TO-3PL
Datasheet
Download
Description
TRANS PNP 230V 15A TO3P
Stock
19,800
In Stock :
19,800

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - Bipolar (BJT) - Single
Radiation Hardening :
No
Height :
26mm
RoHS Status :
RoHS Compliant
Transistor Type :
PNP
Packaging :
Tube
Published :
2000
Max Power Dissipation :
150W
Collector Base Voltage (VCBO) :
230V
Element Configuration :
Single
hFE Min :
80
Current - Collector Cutoff (Max) :
5μA ICBO
Lead Free :
Lead Free
Max Collector Current :
15A
Base Part Number :
2SA1943
Moisture Sensitivity Level (MSL) :
Not Applicable
Emitter Base Voltage (VEBO) :
5V
Number of Elements :
1
Power Dissipation :
150W
Operating Temperature :
150°C TJ
Current Rating :
-15A
Collector Emitter Saturation Voltage :
-3V
Number of Pins :
3
Collector Emitter Breakdown Voltage :
230V
Width :
5.2mm
Frequency :
30MHz
Mount :
Through Hole
Mounting Type :
Through Hole
Collector Emitter Voltage (VCEO) :
230V
Contact Plating :
Copper, Silver, Tin
Length :
20.5mm
Vce Saturation (Max) @ Ib, Ic :
3V @ 800mA, 8A
Gain Bandwidth Product :
30MHz
Voltage - Rated DC :
-230V
DC Current Gain (hFE) (Min) @ Ic, Vce :
80 @ 1A 5V
Factory Lead Time :
12 Weeks
Package / Case :
TO-3PL
Datasheets
2SA1943-O(Q)
Introducing Transistors - Bipolar (BJT) - Single Toshiba Electronic Devices and Storage Corporation 2SA1943-O(Q) from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:2SA1943, Operating Temperature:150°C TJ, Number of Pins:3, Mounting Type:Through Hole, Package / Case:TO-3PL, 2SA1943-O(Q) pinout, 2SA1943-O(Q) datasheet PDF, 2SA1943-O(Q) amp .Beyond Transistors - Bipolar (BJT) - Single Toshiba Electronic Devices and Storage Corporation 2SA1943-O(Q) ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation 2SA1943-O(Q)


PNP 150°C TJ 5μA ICBO 1 Elements TO-3PL Tube Through Hole

2SA1943-O(Q) Overview


In this device, the DC current gain is 80 @ 1A 5V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of -3V ensures maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3V @ 800mA, 8A.The emitter base voltage can be kept at 5V for high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -15A current rating.In extreme cases, the collector current can be as low as 15A volts.


2SA1943-O(Q) Features


  • the DC current gain for this device is 80 @ 1A 5V

  • a collector emitter saturation voltage of -3V

  • the vce saturation(Max) is 3V @ 800mA, 8A

  • the emitter base voltage is kept at 5V

  • the current rating of this device is -15A



2SA1943-O(Q) Applications


There are a lot of Toshiba Semiconductor and Storage 2SA1943-O(Q) applications of single BJT transistors.

  • Muting

  • Inverter

  • Driver

  • Interface

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