2SA1869-Y,Q(J
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- Mfr.Part #
- 2SA1869-Y,Q(J
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS PNP 50V 3A TO220NIS
- Stock
- 5,521
- In Stock ：
- 5,521
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 500mA 2V
- Power - Max :
- 10W
- Frequency - Transition :
- 100MHz
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Published :
- 2007
- Packaging :
- Bulk
- Transistor Type :
- PNP
- Current - Collector (Ic) (Max) :
- 3A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Supplier Device Package :
- TO-220NIS
- Package / Case :
- TO-220-3 Full Pack
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 200mA, 2A
- Datasheets
- 2SA1869-Y,Q(J
PNP 150°C TJ 1μA ICBO TO-220-3 Full Pack Bulk Through Hole
2SA1869-Y,Q(J Overview
In this device, the DC current gain is 70 @ 500mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 600mV @ 200mA, 2A.Product comes in the supplier's device package TO-220NIS.There is a 50V maximal voltage in the device due to collector-emitter breakdown.
2SA1869-Y,Q(J Features
the DC current gain for this device is 70 @ 500mA 2V
the vce saturation(Max) is 600mV @ 200mA, 2A
the supplier device package of TO-220NIS
2SA1869-Y,Q(J Applications
There are a lot of Toshiba Semiconductor and Storage
2SA1869-Y,Q(J applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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