2SA1721RTE85LF
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- Mfr.Part #
- 2SA1721RTE85LF
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 300V 0.1A SMINI
- Stock
- 19,721
- In Stock ：
- 19,721
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 50MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- PNP
- Factory Lead Time :
- 14 Weeks
- Voltage - Collector Emitter Breakdown (Max) :
- 300V
- Frequency - Transition :
- 50MHz
- Packaging :
- Tape and Reel (TR)
- Operating Temperature :
- 150°C TJ
- Surface Mount :
- yes
- Power - Max :
- 150mW
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Configuration :
- Single
- Power Dissipation-Max (Abs) :
- 0.15W
- RoHS Status :
- RoHS Compliant
- Mounting Type :
- Surface Mount
- Reach Compliance Code :
- Unknown
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 20mA 10V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Transistor Type :
- PNP
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Current - Collector (Ic) (Max) :
- 100mA
- Datasheets
- 2SA1721RTE85LF
PNP 150°C TJ 100nA ICBO PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SA1721RTE85LF Overview
This device has a DC current gain of 30 @ 20mA 10V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 2mA, 20mA means Ic has reached its maximum value(saturated).As you can see, the part has a transition frequency of 50MHz.Collector Emitter Breakdown occurs at 300VV - Maximum voltage.
2SA1721RTE85LF Features
the DC current gain for this device is 30 @ 20mA 10V
the vce saturation(Max) is 500mV @ 2mA, 20mA
a transition frequency of 50MHz
2SA1721RTE85LF Applications
There are a lot of Toshiba Semiconductor and Storage
2SA1721RTE85LF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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