2SA1552S-TL-E
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- Mfr.Part #
- 2SA1552S-TL-E
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 160V 1.5A TP-FA
- Stock
- 827
- In Stock ：
- 827
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Height :
- 2.3mm
- Collector Base Voltage (VCBO) :
- 180V
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Pins :
- 3
- Max Breakdown Voltage :
- 160V
- Factory Lead Time :
- 4 Weeks
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- yes
- JESD-609 Code :
- e6
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Element Configuration :
- Single
- Reach Compliance Code :
- not_compliant
- Pbfree Code :
- yes
- Pin Count :
- 3
- Base Part Number :
- 2SA1552
- Frequency - Transition :
- 120MHz
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Max Power Dissipation :
- 1W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- -500mV
- Lead Free :
- Lead Free
- Collector Emitter Breakdown Voltage :
- 160V
- ECCN Code :
- EAR99
- Width :
- 5.5mm
- Max Frequency :
- 1MHz
- Polarity/Channel Type :
- PNP
- Operating Temperature :
- 150°C TJ
- Packaging :
- Tape and Reel (TR)
- Lifecycle Status :
- ACTIVE (Last Updated: 17 hours ago)
- Transistor Type :
- PNP
- hFE Min :
- 100
- Max Collector Current :
- 1.5A
- Published :
- 2012
- Collector Emitter Voltage (VCEO) :
- 160V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 140 @ 100mA 5V
- Length :
- 6.5mm
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheets
- 2SA1552S-TL-E
2SA1552S-TL-E Documents
PNP 150°C TJ 1μA ICBO PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SA1552S-TL-E Overview
In this device, the DC current gain is 140 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Input voltage breakdown is available at 160V volts.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.
2SA1552S-TL-E Features
the DC current gain for this device is 140 @ 100mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
2SA1552S-TL-E Applications
There are a lot of ON Semiconductor
2SA1552S-TL-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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