2SA1552S-TL-E
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- Mfr.Part #
- 2SA1552S-TL-E
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 160V 1.5A TP-FA
- Stock
- 827
- In Stock ：
- 827
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 17 hours ago)
- Emitter Base Voltage (VEBO) :
- 6V
- Height :
- 2.3mm
- hFE Min :
- 100
- Width :
- 5.5mm
- Collector Base Voltage (VCBO) :
- 180V
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Reach Compliance Code :
- not_compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 140 @ 100mA 5V
- Max Collector Current :
- 1.5A
- Mounting Type :
- Surface Mount
- Frequency - Transition :
- 120MHz
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 3
- Max Frequency :
- 1MHz
- Collector Emitter Saturation Voltage :
- -500mV
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 1W
- ECCN Code :
- EAR99
- Max Breakdown Voltage :
- 160V
- Surface Mount :
- yes
- Operating Temperature :
- 150°C TJ
- Collector Emitter Breakdown Voltage :
- 160V
- Published :
- 2012
- Polarity/Channel Type :
- PNP
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Collector Emitter Voltage (VCEO) :
- 160V
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Base Part Number :
- 2SA1552
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Factory Lead Time :
- 4 Weeks
- JESD-609 Code :
- e6
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Length :
- 6.5mm
- Datasheets
- 2SA1552S-TL-E
PNP 150°C TJ 1μA ICBO PNP TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SA1552S-TL-E Overview
In this device, the DC current gain is 140 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 50mA, 500mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Input voltage breakdown is available at 160V volts.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.
2SA1552S-TL-E Features
the DC current gain for this device is 140 @ 100mA 5V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
2SA1552S-TL-E Applications
There are a lot of ON Semiconductor
2SA1552S-TL-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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