2SA1552S-E

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Mfr.Part #
2SA1552S-E
Manufacturer
onsemi
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
TRANS PNP 160V 1.5A TP
Stock
31,988
In Stock :
31,988

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Radiation Hardening :
No
Number of Pins :
3
Polarity/Channel Type :
PNP
Surface Mount :
No
ECCN Code :
EAR99
Max Power Dissipation :
1W
Published :
2012
Current - Collector Cutoff (Max) :
1μA ICBO
Collector Base Voltage (VCBO) :
-180V
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
RoHS Status :
ROHS3 Compliant
Operating Temperature :
150°C TJ
Pin Count :
3
Element Configuration :
Single
Collector Emitter Breakdown Voltage :
160V
Collector Emitter Saturation Voltage :
-200mV
JESD-609 Code :
e6
Transistor Type :
PNP
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Emitter Base Voltage (VEBO) :
-6V
Current - Collector (Ic) (Max) :
1.5A
Base Part Number :
2SA1552
hFE Min :
140
Lead Free :
Lead Free
Terminal Finish :
Tin/Bismuth (Sn/Bi)
Pbfree Code :
yes
Packaging :
Bulk
Collector Emitter Voltage (VCEO) :
500mV
Factory Lead Time :
2 Weeks
Max Collector Current :
1.5A
Mounting Type :
Through Hole
Vce Saturation (Max) @ Ib, Ic :
500mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce :
140 @ 100mA 5V
Gain Bandwidth Product :
120MHz
Datasheets
2SA1552S-E
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SA1552S-E from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Operating Temperature:150°C TJ, Base Part Number:2SA1552, Mounting Type:Through Hole, 2SA1552S-E pinout, 2SA1552S-E datasheet PDF, 2SA1552S-E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SA1552S-E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SA1552S-E


PNP 150°C TJ 1μA ICBO PNP TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole

2SA1552S-E Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 140 @ 100mA 5V.The collector emitter saturation voltage is -200mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -6V can achieve high levels of efficiency.A maximum collector current of 1.5A volts can be achieved.

2SA1552S-E Features


the DC current gain for this device is 140 @ 100mA 5V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -6V


2SA1552S-E Applications


There are a lot of ON Semiconductor
2SA1552S-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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