2SA1416T-TD-E
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- Mfr.Part #
- 2SA1416T-TD-E
- Manufacturer
- onsemi
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 1A PCP
- Stock
- 9,542
- In Stock ：
- 9,542
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Surface Mount :
- yes
- Transition Frequency :
- 120MHz
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 120V
- Collector Emitter Voltage (VCEO) :
- 100V
- Collector Emitter Breakdown Voltage :
- 100V
- Number of Elements :
- 1
- Max Collector Current :
- 1A
- Emitter Base Voltage (VEBO) :
- 6V
- Case Connection :
- COLLECTOR
- Length :
- 4.5mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- PNP
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Current - Collector (Ic) (Max) :
- 1A
- Max Frequency :
- 120MHz
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 5V
- Max Power Dissipation :
- 500mW
- ECCN Code :
- EAR99
- Width :
- 2.5mm
- Reach Compliance Code :
- not_compliant
- Element Configuration :
- Single
- Number of Pins :
- 3
- Terminal Form :
- Flat
- Number of Terminations :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Published :
- 2012
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 4 Weeks
- Transistor Type :
- PNP
- Package / Case :
- TO-243AA
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 120MHz
- hFE Min :
- 100
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 40mA, 400mA
- JESD-609 Code :
- e6
- Collector Emitter Saturation Voltage :
- -600mV
- RoHS Status :
- ROHS3 Compliant
- Height :
- 1.5mm
- Packaging :
- Tape and Reel (TR)
- Datasheets
- 2SA1416T-TD-E
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PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2SA1416T-TD-E Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 40mA, 400mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 120MHz.During maximum operation, collector current can be as low as 1A volts.
2SA1416T-TD-E Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 400mV @ 40mA, 400mA
the emitter base voltage is kept at 6V
a transition frequency of 120MHz
2SA1416T-TD-E Applications
There are a lot of ON Semiconductor
2SA1416T-TD-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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