2SA1416T-TD-E
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- Mfr.Part #
- 2SA1416T-TD-E
- Manufacturer
- onsemi
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 1A PCP
- Stock
- 9,542
- In Stock ：
- 9,542
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 40mA, 400mA
- hFE Min :
- 100
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 120V
- Max Power Dissipation :
- 500mW
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Published :
- 2012
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Height :
- 1.5mm
- Number of Pins :
- 3
- Reach Compliance Code :
- not_compliant
- Polarity/Channel Type :
- PNP
- Operating Temperature :
- 150°C TJ
- Width :
- 2.5mm
- Surface Mount :
- yes
- Number of Terminations :
- 3
- Package / Case :
- TO-243AA
- Terminal Form :
- Flat
- Gain Bandwidth Product :
- 120MHz
- Lead Free :
- Lead Free
- Factory Lead Time :
- 4 Weeks
- Number of Elements :
- 1
- JESD-609 Code :
- e6
- Length :
- 4.5mm
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Saturation Voltage :
- -600mV
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 100V
- Max Collector Current :
- 1A
- Collector Emitter Breakdown Voltage :
- 100V
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Case Connection :
- COLLECTOR
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 5V
- Transition Frequency :
- 120MHz
- Current - Collector (Ic) (Max) :
- 1A
- Emitter Base Voltage (VEBO) :
- 6V
- Max Frequency :
- 120MHz
- ECCN Code :
- EAR99
- Datasheets
- 2SA1416T-TD-E
2SA1416T-TD-E Documents
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PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-243AA Tape & Reel (TR) Surface Mount
2SA1416T-TD-E Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 40mA, 400mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Parts of this part have transition frequencies of 120MHz.During maximum operation, collector current can be as low as 1A volts.
2SA1416T-TD-E Features
the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 400mV @ 40mA, 400mA
the emitter base voltage is kept at 6V
a transition frequency of 120MHz
2SA1416T-TD-E Applications
There are a lot of ON Semiconductor
2SA1416T-TD-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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