2SA1381E
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- Mfr.Part #
- 2SA1381E
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANSISTOR
- Stock
- 4,487
- In Stock ：
- 4,487
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-30 Code :
- R-PSFM-T3
- Number of Terminations :
- 3
- Package / Case :
- TO-225AA, TO-126-3
- Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Power - Max :
- 7W
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Type :
- PNP
- Frequency - Transition :
- 150MHz
- Transistor Application :
- AMPLIFIER
- Terminal Position :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 600mV @ 2mA, 20mA
- Reach Compliance Code :
- Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 10mA 10V
- Transition Frequency :
- 150MHz
- Polarity/Channel Type :
- PNP
- Voltage - Collector Emitter Breakdown (Max) :
- 300V
- Base Part Number :
- 2SA1381
- Packaging :
- Tube
- Current - Collector (Ic) (Max) :
- 100mA
- Operating Temperature :
- -55°C~150°C TJ
- Surface Mount :
- No
- Datasheets
- 2SA1381E
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-225AA, TO-126-3 Tube Through Hole
2SA1381ESTU Overview
In this device, the DC current gain is 100 @ 10mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 2mA, 20mA.150MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 300V.
2SA1381ESTU Features
the DC current gain for this device is 100 @ 10mA 10V
the vce saturation(Max) is 600mV @ 2mA, 20mA
a transition frequency of 150MHz
2SA1381ESTU Applications
There are a lot of ON Semiconductor
2SA1381ESTU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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