2SA1313-Y,LF
- Mfr.Part #
- 2SA1313-Y,LF
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.5A SMINI
- Stock
- 24,303
- In Stock :
- 24,303
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- PNP
- Max Operating Temperature :
- 150°C
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Breakdown Voltage :
- 50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 200MHz
- Factory Lead Time :
- 12 Weeks
- Power - Max :
- 200mW
- Max Collector Current :
- 500mA
- Min Operating Temperature :
- -55°C
- Mounting Type :
- Surface Mount
- Max Breakdown Voltage :
- 50V
- Length :
- 2.9mm
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Collector Base Voltage (VCBO) :
- -50V
- Published :
- 2014
- Collector Emitter Voltage (VCEO) :
- 250mV
- Continuous Collector Current :
- -500mA
- Polarity :
- PNP
- Width :
- 1.5mm
- Emitter Base Voltage (VEBO) :
- -5V
- Supplier Device Package :
- S-MINI
- Frequency - Transition :
- 200MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 1V
- Collector Emitter Saturation Voltage :
- -100mV
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- hFE Min :
- 25
- Max Power Dissipation :
- 200mW
- Operating Temperature :
- 150°C TJ
- Current - Collector (Ic) (Max) :
- 500mA
- Height :
- 1.1mm
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- RoHS Compliant
- Datasheets
- 2SA1313-Y,LF

PNP 150°C TJ 100nA ICBO TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SA1313-Y,LF Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of -100mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -500mA.Keeping the emitter base voltage at -5V can result in a high level of efficiency.Single BJT transistor can be broken down at a voltage of 50V volts.There is no device package available from the supplier for this product.Single BJT transistor shows a 50V maximal voltage - Collector EmSingle BJT transistorter Breakdown.When collector current reaches its maximum, it can reach 500mA volts.
2SA1313-Y,LF Features
the DC current gain for this device is 120 @ 100mA 1V
a collector emitter saturation voltage of -100mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
the supplier device package of S-Mini
2SA1313-Y,LF Applications
There are a lot of Toshiba Semiconductor and Storage
2SA1313-Y,LF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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