2SA1312-BL(TE85L,F
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- Mfr.Part #
- 2SA1312-BL(TE85L,F
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 120V 0.1A SMINI
- Stock
- 17,972
- In Stock ：
- 17,972
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Surface Mount
- hFE Min :
- 200
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Collector Emitter Breakdown Voltage :
- 120V
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Packaging :
- Cut Tape (CT)
- Contact Plating :
- Copper, Silver, Tin
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 125°C TJ
- Transistor Type :
- PNP
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Factory Lead Time :
- 16 Weeks
- Collector Base Voltage (VCBO) :
- -120V
- Radiation Hardening :
- No
- Frequency :
- 100MHz
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 1mA, 10mA
- Max Power Dissipation :
- 150mW
- Length :
- 2.9mm
- Collector Emitter Saturation Voltage :
- -300mV
- Gain Bandwidth Product :
- 100MHz
- RoHS Status :
- RoHS Compliant
- Max Breakdown Voltage :
- 120V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 350 @ 2mA 6V
- Max Collector Current :
- 100mA
- Width :
- 1.5mm
- Published :
- 2009
- Height :
- 1.1mm
- Power Dissipation :
- 150mW
- Collector Emitter Voltage (VCEO) :
- 300mV
- Emitter Base Voltage (VEBO) :
- -5V
- Element Configuration :
- Single
- Datasheets
- 2SA1312-BL(TE85L,F
PNP 125°C TJ 100nA ICBO 1 Elements TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
2SA1312-BL(TE85L,F Overview
In this device, the DC current gain is 350 @ 2mA 6V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -300mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 1mA, 10mA.With the emitter base voltage set at -5V, an efficient operation can be achieved.Input voltage breakdown is available at 120V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
2SA1312-BL(TE85L,F Features
the DC current gain for this device is 350 @ 2mA 6V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at -5V
2SA1312-BL(TE85L,F Applications
There are a lot of Toshiba Semiconductor and Storage
2SA1312-BL(TE85L,F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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