2SA1312-BL(TE85L,F
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- Mfr.Part #
- 2SA1312-BL(TE85L,F
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 120V 0.1A SMINI
- Stock
- 17,972
- In Stock ：
- 17,972
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 1mA, 10mA
- Transistor Type :
- PNP
- Number of Pins :
- 3
- Max Power Dissipation :
- 150mW
- Collector Emitter Saturation Voltage :
- -300mV
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Packaging :
- Cut Tape (CT)
- Length :
- 2.9mm
- Max Collector Current :
- 100mA
- Emitter Base Voltage (VEBO) :
- -5V
- Height :
- 1.1mm
- Max Breakdown Voltage :
- 120V
- Operating Temperature :
- 125°C TJ
- Collector Emitter Breakdown Voltage :
- 120V
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 350 @ 2mA 6V
- Gain Bandwidth Product :
- 100MHz
- Published :
- 2009
- Contact Plating :
- Copper, Silver, Tin
- Frequency :
- 100MHz
- hFE Min :
- 200
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- RoHS Status :
- RoHS Compliant
- Collector Emitter Voltage (VCEO) :
- 300mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 150mW
- Factory Lead Time :
- 16 Weeks
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Width :
- 1.5mm
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- -120V
- Datasheets
- 2SA1312-BL(TE85L,F
PNP 125°C TJ 100nA ICBO 1 Elements TO-236-3, SC-59, SOT-23-3 Cut Tape (CT) Surface Mount
2SA1312-BL(TE85L,F Overview
In this device, the DC current gain is 350 @ 2mA 6V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -300mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 1mA, 10mA.With the emitter base voltage set at -5V, an efficient operation can be achieved.Input voltage breakdown is available at 120V volts.Single BJT transistor is possible for the collector current to fall as low as 100mA volts at Single BJT transistors maximum.
2SA1312-BL(TE85L,F Features
the DC current gain for this device is 350 @ 2mA 6V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 1mA, 10mA
the emitter base voltage is kept at -5V
2SA1312-BL(TE85L,F Applications
There are a lot of Toshiba Semiconductor and Storage
2SA1312-BL(TE85L,F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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