2SA1244-Y(Q)
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- Mfr.Part #
- 2SA1244-Y(Q)
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS PNP 50V 5A PW-MOLD
- Stock
- 16,034
- In Stock ：
- 16,034
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Mount :
- Surface Mount
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 1W
- Min Operating Temperature :
- -55°C
- Collector Emitter Breakdown Voltage :
- 50V
- Power Dissipation :
- 1W
- hFE Min :
- 120
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Polarity :
- PNP
- Transistor Type :
- PNP
- Current - Collector (Ic) (Max) :
- 5A
- Power - Max :
- 1W
- Emitter Base Voltage (VEBO) :
- 5V
- Published :
- 2013
- RoHS Status :
- RoHS Compliant
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 3
- Frequency :
- 60MHz
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 60MHz
- Supplier Device Package :
- PW-MOLD
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 1A 1V
- Frequency - Transition :
- 60MHz
- Collector Base Voltage (VCBO) :
- 60V
- Collector Emitter Voltage (VCEO) :
- 50V
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 150mA, 3A
- Max Collector Current :
- 5A
- Contact Plating :
- Silver, Tin
- Max Operating Temperature :
- 150°C
- Datasheets
- 2SA1244-Y(Q)
PNP 150°C TJ 1μA ICBO 1 Elements TO-252-3, DPak (2 Leads + Tab), SC-63 Tube Surface Mount
2SA1244-Y(Q) Overview
DC current gain in this device equals 120 @ 1A 1V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 150mA, 3A.An emitter's base voltage can be kept at 5V to gain high efficiency.Product comes in PW-MOLD supplier package.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.In extreme cases, the collector current can be as low as 5A volts.
2SA1244-Y(Q) Features
the DC current gain for this device is 120 @ 1A 1V
the vce saturation(Max) is 400mV @ 150mA, 3A
the emitter base voltage is kept at 5V
the supplier device package of PW-MOLD
2SA1244-Y(Q) Applications
There are a lot of Toshiba Semiconductor and Storage
2SA1244-Y(Q) applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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