2SA1162S-Y,LF
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- Mfr.Part #
- 2SA1162S-Y,LF
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.15A SMINI
- Stock
- 1,607
- In Stock ：
- 1,607
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 50V
- Mounting Type :
- Surface Mount
- RoHS Status :
- RoHS Compliant
- Transistor Type :
- PNP
- Published :
- 2009
- Reach Compliance Code :
- Unknown
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Power - Max :
- 150mW
- Polarity/Channel Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 2mA 6V
- Collector Emitter Voltage (VCEO) :
- 300mV
- Max Power Dissipation :
- 150mW
- Emitter Base Voltage (VEBO) :
- -5V
- Base Part Number :
- 2SA1162
- Factory Lead Time :
- 16 Weeks
- Max Collector Current :
- 150mA
- Gain Bandwidth Product :
- 80MHz
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Configuration :
- Single
- Operating Temperature :
- 125°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Number of Terminations :
- 3
- Transistor Application :
- AMPLIFIER
- Terminal Form :
- Gull wing
- Additional Feature :
- LOW NOISE
- JESD-30 Code :
- R-PDSO-G3
- hFE Min :
- 70
- Transition Frequency :
- 80MHz
- Max Breakdown Voltage :
- 50V
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Datasheets
- 2SA1162S-Y,LF
PNP 125°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SA1162S-Y,LF Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 70 @ 2mA 6V.When VCE saturation is 300mV @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of -5V can achieve high levels of efficiency.In the part, the transition frequency is 80MHz.This device can take an input voltage of 50V volts before it breaks down.A maximum collector current of 150mA volts can be achieved.
2SA1162S-Y,LF Features
the DC current gain for this device is 70 @ 2mA 6V
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
a transition frequency of 80MHz
2SA1162S-Y,LF Applications
There are a lot of Toshiba Semiconductor and Storage
2SA1162S-Y,LF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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