2SA1162S-GR,LF(D

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Mfr.Part #
2SA1162S-GR,LF(D
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS PNP 50V 0.15A SMINI
Stock
10,595
In Stock :
10,595

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - Bipolar (BJT) - Single
Terminal Position :
Dual
Reach Compliance Code :
Unknown
Terminal Form :
Gull wing
Operating Temperature :
125°C TJ
Frequency - Transition :
80MHz
Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Power Dissipation :
150mW
Vce Saturation (Max) @ Ib, Ic :
300mV @ 10mA, 100mA
Collector Emitter Voltage (VCEO) :
300mV
Number of Terminations :
3
Power - Max :
150mW
Collector Base Voltage (VCBO) :
50V
Published :
2014
Number of Pins :
3
Additional Feature :
LOW NOISE
Transistor Element Material :
SILICON
Mount :
Surface Mount
Emitter Base Voltage (VEBO) :
5V
Polarity/Channel Type :
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce :
70 @ 2mA 6V
Package / Case :
TO-236-3, SC-59, SOT-23-3
ECCN Code :
EAR99
Collector Emitter Breakdown Voltage :
50V
Packaging :
Tape and Reel (TR)
Max Collector Current :
150mA
RoHS Status :
RoHS Compliant
Transition Frequency :
80MHz
Transistor Application :
AMPLIFIER
Current - Collector Cutoff (Max) :
100nA ICBO
Mounting Type :
Surface Mount
Number of Elements :
1
Transistor Type :
PNP
Datasheets
2SA1162S-GR,LF(D
Introducing Transistors - Bipolar (BJT) - Single Toshiba Electronic Devices and Storage Corporation 2SA1162S-GR,LF(D from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:125°C TJ, Number of Terminations:3, Number of Pins:3, Package / Case:TO-236-3, SC-59, SOT-23-3, Mounting Type:Surface Mount, 2SA1162S-GR,LF(D pinout, 2SA1162S-GR,LF(D datasheet PDF, 2SA1162S-GR,LF(D amp .Beyond Transistors - Bipolar (BJT) - Single Toshiba Electronic Devices and Storage Corporation 2SA1162S-GR,LF(D ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation 2SA1162S-GR,LF(D


PNP 125°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

2SA1162S-GR,LF(D Overview


This device has a DC current gain of 70 @ 2mA 6V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.In this part, there is a transition frequency of 80MHz.The maximum collector current is 150mA volts.

2SA1162S-GR,LF(D Features


the DC current gain for this device is 70 @ 2mA 6V
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 80MHz


2SA1162S-GR,LF(D Applications


There are a lot of Toshiba Semiconductor and Storage
2SA1162S-GR,LF(D applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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