2SA1162S-GR,LF(D
- Mfr.Part #
- 2SA1162S-GR,LF(D
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.15A SMINI
- Stock
- 10,595
- In Stock :
- 10,595
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Dual
- Reach Compliance Code :
- Unknown
- Terminal Form :
- Gull wing
- Operating Temperature :
- 125°C TJ
- Frequency - Transition :
- 80MHz
- Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 150mW
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Collector Emitter Voltage (VCEO) :
- 300mV
- Number of Terminations :
- 3
- Power - Max :
- 150mW
- Collector Base Voltage (VCBO) :
- 50V
- Published :
- 2014
- Number of Pins :
- 3
- Additional Feature :
- LOW NOISE
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 5V
- Polarity/Channel Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 2mA 6V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 50V
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 150mA
- RoHS Status :
- RoHS Compliant
- Transition Frequency :
- 80MHz
- Transistor Application :
- AMPLIFIER
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Transistor Type :
- PNP
- Datasheets
- 2SA1162S-GR,LF(D

PNP 125°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SA1162S-GR,LF(D Overview
This device has a DC current gain of 70 @ 2mA 6V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.In this part, there is a transition frequency of 80MHz.The maximum collector current is 150mA volts.
2SA1162S-GR,LF(D Features
the DC current gain for this device is 70 @ 2mA 6V
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 80MHz
2SA1162S-GR,LF(D Applications
There are a lot of Toshiba Semiconductor and Storage
2SA1162S-GR,LF(D applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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