2SA1162-Y,LXHF
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- Mfr.Part #
- 2SA1162-Y,LXHF
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.15A SMINI
- Stock
- 17,872
- In Stock ：
- 17,872
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 2mA, 6V
- Transistor Type :
- PNP
- Configuration :
- Single
- Maximum Operating Temperature :
- + 125 C
- Frequency - Transition :
- 80MHz
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Product Status :
- Active
- Transistor Polarity :
- PNP
- Mounting Type :
- Surface Mount
- Technology :
- Si
- Package :
- Digi-Reel?
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Current - Collector (Ic) (Max) :
- 150 mA
- Supplier Device Package :
- S-MINI
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- Power - Max :
- 200 mW
- Voltage - Collector Emitter Breakdown (Max) :
- 50 V
- Mounting Style :
- SMD/SMT
- Operating Temperature :
- 125°C (TJ)
- Series :
- Automotive, AEC-Q101
- Datasheets
- 2SA1162-Y,LXHF
PNP 125°C (TJ) 100nA (ICBO) TO-236-3, SC-59, SOT-23-3 Surface Mount
2SA1162-Y,LXHF Overview
In this device, the DC current gain is 120 @ 2mA, 6V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 10mA, 100mA.Supplier device package S-Mini comes with the product.The device exhibits a collector-emitter breakdown at 50 V.
2SA1162-Y,LXHF Features
the DC current gain for this device is 120 @ 2mA, 6V
the vce saturation(Max) is 300mV @ 10mA, 100mA
the supplier device package of S-Mini
2SA1162-Y,LXHF Applications
There are a lot of Toshiba Semiconductor and Storage
2SA1162-Y,LXHF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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