2SA1162-Y,LF
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- Mfr.Part #
- 2SA1162-Y,LF
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.15A SMINI
- Stock
- 13,509
- In Stock ：
- 13,509
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 50V
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- hFE Min :
- 70
- Max Collector Current :
- 150mA
- Factory Lead Time :
- 12 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- RoHS Compliant
- Emitter Base Voltage (VEBO) :
- 5V
- Gain Bandwidth Product :
- 80MHz
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Power - Max :
- 150mW
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 100mV
- Published :
- 2006
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 2mA 6V
- Operating Temperature :
- 125°C TJ
- Transistor Type :
- PNP
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 150mW
- Weight :
- 7.994566mg
- Collector Emitter Breakdown Voltage :
- 50V
- Max Breakdown Voltage :
- 50V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Collector Emitter Voltage (VCEO) :
- 50V
- Datasheets
- 2SA1162-Y,LF
PNP 125°C TJ 100μA ICBO TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SA1162-Y,LF Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 2mA 6V.The collector emitter saturation voltage is 100mV, which allows for maximum design flexibility.When VCE saturation is 300mV @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.This device can take an input voltage of 50V volts before it breaks down.A maximum collector current of 150mA volts can be achieved.
2SA1162-Y,LF Features
the DC current gain for this device is 120 @ 2mA 6V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
2SA1162-Y,LF Applications
There are a lot of Toshiba Semiconductor and Storage
2SA1162-Y,LF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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