2SA1162-O,LXHF

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Mfr.Part #
2SA1162-O,LXHF
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS PNP 50V 0.15A SMINI
Stock
5,965
In Stock :
5,965

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Manufacturer :
Toshiba Electronic Devices and Storage Corporation
Product Category :
Transistors - Bipolar (BJT) - Single
DC Current Gain (hFE) (Min) @ Ic, Vce :
70 @ 2mA, 6V
Technology :
Si
Package :
Digi-Reel?
Series :
Automotive, AEC-Q101
Frequency - Transition :
80MHz
Configuration :
Single
Power - Max :
200 mW
Mounting Style :
SMD/SMT
Package / Case :
TO-236-3, SC-59, SOT-23-3
Mounting Type :
Surface Mount
Vce Saturation (Max) @ Ib, Ic :
300mV @ 10mA, 100mA
Product Status :
Active
Operating Temperature :
125°C (TJ)
Transistor Polarity :
PNP
Maximum Operating Temperature :
+ 125 C
Voltage - Collector Emitter Breakdown (Max) :
50 V
Current - Collector (Ic) (Max) :
150 mA
Current - Collector Cutoff (Max) :
100nA (ICBO)
Supplier Device Package :
S-MINI
Transistor Type :
PNP
Datasheets
2SA1162-O,LXHF
Introducing Transistors - Bipolar (BJT) - Single Toshiba Electronic Devices and Storage Corporation 2SA1162-O,LXHF from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-236-3, SC-59, SOT-23-3, Mounting Type:Surface Mount, Operating Temperature:125°C (TJ), 2SA1162-O,LXHF pinout, 2SA1162-O,LXHF datasheet PDF, 2SA1162-O,LXHF amp .Beyond Transistors - Bipolar (BJT) - Single Toshiba Electronic Devices and Storage Corporation 2SA1162-O,LXHF ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Toshiba Electronic Devices and Storage Corporation 2SA1162-O,LXHF


PNP 125°C (TJ) 100nA (ICBO) TO-236-3, SC-59, SOT-23-3 Surface Mount

2SA1162-O,LXHF Overview


This device has a DC current gain of 70 @ 2mA, 6V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 300mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).Product package S-Mini comes from the supplier.Collector Emitter Breakdown occurs at 50 VV - Maximum voltage.

2SA1162-O,LXHF Features


the DC current gain for this device is 70 @ 2mA, 6V
the vce saturation(Max) is 300mV @ 10mA, 100mA
the supplier device package of S-Mini


2SA1162-O,LXHF Applications


There are a lot of Toshiba Semiconductor and Storage
2SA1162-O,LXHF applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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