2SA1162-O,LF
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- Mfr.Part #
- 2SA1162-O,LF
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS PNP 50V 0.15A SMINI
- Stock
- 18,520
- In Stock ：
- 18,520
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2014
- Operating Temperature :
- 125°C TJ
- RoHS Status :
- RoHS Compliant
- Packaging :
- Tape and Reel (TR)
- Gain Bandwidth Product :
- 80MHz
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 10mA, 100mA
- Power - Max :
- 150mW
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Factory Lead Time :
- 12 Weeks
- Max Power Dissipation :
- 150mW
- Max Breakdown Voltage :
- 50V
- Continuous Collector Current :
- -150mA
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- -5V
- Collector Emitter Breakdown Voltage :
- 50V
- Transistor Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Reach Compliance Code :
- Unknown
- Collector Emitter Voltage (VCEO) :
- 300mV
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 2mA 6V
- Max Collector Current :
- 150mA
- Collector Base Voltage (VCBO) :
- -50V
- Collector Emitter Saturation Voltage :
- -300mV
- Datasheets
- 2SA1162-O,LF
PNP 125°C TJ 100nA ICBO TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SA1162-O,LF Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 2mA 6V DC current gain.As it features a collector emitter saturation voltage of -300mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.For high efficiency, the continuous collector voltage must be kept at -150mA.Keeping the emitter base voltage at -5V can result in a high level of efficiency.Single BJT transistor can be broken down at a voltage of 50V volts.When collector current reaches its maximum, it can reach 150mA volts.
2SA1162-O,LF Features
the DC current gain for this device is 200 @ 2mA 6V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at -5V
2SA1162-O,LF Applications
There are a lot of Toshiba Semiconductor and Storage
2SA1162-O,LF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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