2SA1020-Y(T6TR,A,F
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- Mfr.Part #
- 2SA1020-Y(T6TR,A,F
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS PNP 50V 2A TO92MOD
- Stock
- 2,012
- In Stock ：
- 2,012
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power - Max :
- 900mW
- Transistor Type :
- PNP
- Frequency - Transition :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 500mA 2V
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 1A
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector (Ic) (Max) :
- 2A
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- Packaging :
- Bulk
- Supplier Device Package :
- TO-92MOD
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Published :
- 2010
- Operating Temperature :
- 150°C TJ
- Datasheets
- 2SA1020-Y(T6TR,A,F
PNP 150°C TJ 1μA ICBO TO-226-3, TO-92-3 Long Body Bulk Through Hole
2SA1020-Y(T6TR,A,F Overview
This device has a DC current gain of 70 @ 500mA 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor comes in a supplier device package of TO-92MOD.Detection of Collector Emitter Breakdown at 50V maximal voltage is present.
2SA1020-Y(T6TR,A,F Features
the DC current gain for this device is 70 @ 500mA 2V
the vce saturation(Max) is 500mV @ 50mA, 1A
the supplier device package of TO-92MOD
2SA1020-Y(T6TR,A,F Applications
There are a lot of Toshiba Semiconductor and Storage
2SA1020-Y(T6TR,A,F applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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