2N911

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Single

DC Current Gain-Min (hFE) :

35

JESD-609 Code :

e0

Subcategory :

Transistors

Product Status :

Active

JESD-30 Code :

O-MBCY-W3

Voltage - Collector Emitter Breakdown (Max) :

60 V

Transistor Application :

SWITCHING

Power Dissipation-Max (Abs) :

0.5 W

Polarity/Channel Type :

NPN

Package :

Bulk

Reach Compliance Code :

Unknown

Mounting Type :

Through Hole

Transistor Polarity :

NPN

Pbfree Code :

No

Terminal Form :

Wire

Surface Mount :

No

Current - Collector Cutoff (Max) :

-

Product Category :

Bipolar Transistors - BJT

Collector-Emitter Voltage-Max :

60 V

Package Shape :

Round

Qualification Status :

Not Qualified

Terminal Finish :

Tin/Lead (Sn/Pb)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Technology :

Si

Terminal Position :

BOTTOM

Frequency - Transition :

50MHz

Vce Saturation (Max) @ Ib, Ic :

1V @ 5mA, 50mA

Operating Temperature :

-65°C ~ 200°C (TJ)

Configuration :

Single

Transistor Element Material :

SILICON

Transistor Type :

NPN

Manufacturer :

Microchip

Brand :

Microchip Technology / Atmel

Number of Terminals :

3

Supplier Device Package :

TO-18 (TO-206AA)

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 3A, 4V

Number of Elements :

1

Series :

-

Package / Case :

TO-206AA, TO-18-3 Metal Can

JEDEC-95 Code :

TO-18

Power - Max :

800 mW

Product Type :

BJTs - Bipolar Transistors