2N6517BU
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- Mfr.Part #
- 2N6517BU
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 350V 0.5A TO92-3
- Stock
- 10,436
- In Stock ：
- 10,436
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- 2N6517
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 50mA 10V
- Collector Emitter Saturation Voltage :
- 1V
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- RoHS Status :
- ROHS3 Compliant
- Contact Plating :
- Tin
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 5mA, 50mA
- Power Dissipation :
- 625mW
- Max Power Dissipation :
- 625mW
- ECCN Code :
- EAR99
- Weight :
- 179mg
- Height :
- 4.58mm
- Gain Bandwidth Product :
- 200MHz
- Packaging :
- Bulk
- Max Collector Current :
- 500mA
- Collector Emitter Voltage (VCEO) :
- 350V
- Collector Base Voltage (VCBO) :
- 350V
- Factory Lead Time :
- 2 Weeks
- Frequency :
- 200MHz
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 6V
- Length :
- 4.58mm
- Radiation Hardening :
- No
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Published :
- 2007
- Mount :
- Through Hole
- Terminal Position :
- BOTTOM
- Number of Terminations :
- 3
- Polarity/Channel Type :
- NPN
- Voltage - Rated DC :
- 350V
- Current Rating :
- 500mA
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Operating Temperature :
- 150°C TJ
- hFE Min :
- 30
- Transistor Type :
- NPN
- Transition Frequency :
- 40MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Collector Emitter Breakdown Voltage :
- 350V
- Width :
- 3.86mm
- Element Configuration :
- Single
- Datasheets
- 2N6517BU
,TO-226_straightlead.jpg)
NPN 150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
2N6517BU Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 20 @ 50mA 10V DC current gain.As it features a collector emitter saturation voltage of 1V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 40MHz in the part.When collector current reaches its maximum, it can reach 500mA volts.
2N6517BU Features
the DC current gain for this device is 20 @ 50mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 40MHz
2N6517BU Applications
There are a lot of ON Semiconductor
2N6517BU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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