2N6517BU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Vce Saturation (Max) @ Ib, Ic :

1V @ 5mA, 50mA

Pbfree Code :

yes

Max Power Dissipation :

625mW

REACH SVHC :

No SVHC

Power Dissipation :

625mW

RoHS Status :

ROHS3 Compliant

Current Rating :

500mA

Number of Elements :

1

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Weight :

179mg

Base Part Number :

2N6517

Length :

4.58mm

Packaging :

Bulk

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Base Voltage (VCBO) :

350V

Mount :

Through Hole

Transistor Element Material :

SILICON

Voltage - Rated DC :

350V

Transistor Type :

NPN

Max Collector Current :

500mA

Collector Emitter Saturation Voltage :

1V

Published :

2007

Gain Bandwidth Product :

200MHz

Collector Emitter Voltage (VCEO) :

350V

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Emitter Base Voltage (VEBO) :

6V

Height :

4.58mm

Terminal Position :

BOTTOM

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 50mA 10V

Current - Collector Cutoff (Max) :

50nA ICBO

Lead Free :

Lead Free

ECCN Code :

EAR99

Factory Lead Time :

2 Weeks

Element Configuration :

Single

Frequency :

200MHz

hFE Min :

30

Operating Temperature :

150°C TJ

Transition Frequency :

40MHz

Collector Emitter Breakdown Voltage :

350V

Width :

3.86mm

Number of Terminations :

3

Polarity/Channel Type :

NPN

JESD-609 Code :

e3

Number of Pins :

3

Mounting Type :

Through Hole