2N6517-BP
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- Mfr.Part #
- 2N6517-BP
- Manufacturer
- Micro Commercial Components (MCC)
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 350V 0.5A TO92
- Stock
- 4,325
- In Stock ：
- 4,325
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- Manufacturer :
- Micro Commercial Components (MCC)
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 40MHz
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Turn Off Time-Max (toff) :
- 3500ns
- Frequency - Transition :
- 200MHz
- Mounting Type :
- Through Hole
- Power - Max :
- 625mW
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Number of Elements :
- 1
- Turn On Time-Max (ton) :
- 200ns
- Terminal Position :
- BOTTOM
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Configuration :
- Single
- Pbfree Code :
- yes
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Terminal Finish :
- Matte Tin (Sn)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 30 @ 30mA 10V
- Qualification Status :
- Not Qualified
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 5mA, 50mA
- Current - Collector (Ic) (Max) :
- 500mA
- Polarity/Channel Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 350V
- RoHS Status :
- ROHS3 Compliant
- JESD-30 Code :
- O-PBCY-T3
- Surface Mount :
- No
- Datasheets
- 2N6517-BP
,TO-226_bentlead.jpg)
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Through Hole
2N6517-BP Overview
In this device, the DC current gain is 30 @ 30mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 5mA, 50mA.40MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 350V.
2N6517-BP Features
the DC current gain for this device is 30 @ 30mA 10V
the vce saturation(Max) is 1V @ 5mA, 50mA
a transition frequency of 40MHz
2N6517-BP Applications
There are a lot of Micro Commercial Co
2N6517-BP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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