2N6286G
- Mfr.Part #
- 2N6286G
- Manufacturer
- onsemi
- Package / Case
- TO-204AA, TO-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 80V 20A TO204
- Stock
- 15,077
- In Stock :
- 15,077
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 2V
- Transistor Application :
- AMPLIFIER
- Package / Case :
- TO-204AA, TO-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 10A 3V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Voltage - Rated DC :
- -80V
- Emitter Base Voltage (VEBO) :
- 5V
- Current Rating :
- 20A
- Pin Count :
- 2
- Number of Pins :
- 2
- Collector Base Voltage (VCBO) :
- 80V
- Surface Mount :
- No
- Max Collector Current :
- 20A
- Collector Emitter Breakdown Voltage :
- 80V
- Transistor Type :
- PNP - Darlington
- Current - Collector Cutoff (Max) :
- 1mA
- Pbfree Code :
- yes
- Contact Plating :
- Tin
- Element Configuration :
- Single
- Transition Frequency :
- 4MHz
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 200mA, 20A
- Terminal Position :
- BOTTOM
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 2
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Polarity :
- PNP
- Factory Lead Time :
- 2 Weeks
- Width :
- 26.67mm
- Length :
- 39.37mm
- Operating Temperature :
- -65°C~200°C TJ
- REACH SVHC :
- No SVHC
- Collector Emitter Voltage (VCEO) :
- 80V
- Packaging :
- Tray
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Height :
- 8.51mm
- ECCN Code :
- EAR99
- Published :
- 2008
- Max Power Dissipation :
- 160W
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- 2N6286
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Weight :
- 4.535924g
- Case Connection :
- COLLECTOR
- Terminal Form :
- PIN/PEG
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Continuous Collector Current :
- 20A
- Datasheets
- 2N6286G

PNP - Darlington -65°C~200°C TJ 1mA 1 Elements 2 Terminations SILICON TO-204AA, TO-3 Tray Through Hole
2N6286G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 10A 3V.The collector emitter saturation voltage is 2V, which allows for maximum design flexibility.When VCE saturation is 3V @ 200mA, 20A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 20A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 20A.In the part, the transition frequency is 4MHz.A maximum collector current of 20A volts can be achieved.
2N6286G Features
the DC current gain for this device is 750 @ 10A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 200mA, 20A
the emitter base voltage is kept at 5V
the current rating of this device is 20A
a transition frequency of 4MHz
2N6286G Applications
There are a lot of ON Semiconductor
2N6286G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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