2N6052G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Base Part Number :

2N6052

Number of Pins :

2

Vce Saturation (Max) @ Ib, Ic :

3V @ 120mA, 12A

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

100V

Continuous Collector Current :

12A

Length :

39.37mm

Collector Base Voltage (VCBO) :

100V

Pin Count :

2

Number of Terminations :

2

Transistor Application :

SWITCHING

Height :

8.51mm

Width :

26.67mm

Terminal Form :

PIN/PEG

JESD-609 Code :

e3

Radiation Hardening :

No

Collector Emitter Saturation Voltage :

2V

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Package / Case :

TO-204AA, TO-3

Number of Elements :

1

Max Collector Current :

12A

Factory Lead Time :

5 Weeks

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 6A 3V

Emitter Base Voltage (VEBO) :

5V

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

REACH SVHC :

No SVHC

Contact Plating :

Tin

Current - Collector Cutoff (Max) :

1mA

Pbfree Code :

yes

Lead Free :

Lead Free

Mounting Type :

Through Hole

Published :

2000

Transistor Type :

PNP - Darlington

Element Configuration :

Single

Collector Emitter Breakdown Voltage :

100V

Case Connection :

COLLECTOR

Max Power Dissipation :

150W

Packaging :

Tray

Current Rating :

-12A

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation :

150W

Operating Temperature :

-65°C~200°C TJ

Voltage - Rated DC :

-100V

Weight :

4.535924g

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

BOTTOM

Transition Frequency :

4MHz

Polarity :

PNP

Surface Mount :

No