2N6052G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Height :

8.51mm

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

REACH SVHC :

No SVHC

Factory Lead Time :

5 Weeks

Max Collector Current :

12A

Pin Count :

2

Transition Frequency :

4MHz

Lead Free :

Lead Free

Emitter Base Voltage (VEBO) :

5V

Length :

39.37mm

Vce Saturation (Max) @ Ib, Ic :

3V @ 120mA, 12A

Contact Plating :

Tin

Transistor Element Material :

SILICON

Width :

26.67mm

Current Rating :

-12A

Collector Emitter Saturation Voltage :

2V

Collector Emitter Breakdown Voltage :

100V

Power Dissipation :

150W

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

JESD-609 Code :

e3

Published :

2000

Element Configuration :

Single

Operating Temperature :

-65°C~200°C TJ

Transistor Type :

PNP - Darlington

Number of Pins :

2

Max Power Dissipation :

150W

Lifecycle Status :

ACTIVE (Last Updated: 2 days ago)

Package / Case :

TO-204AA, TO-3

DC Current Gain (hFE) (Min) @ Ic, Vce :

750 @ 6A 3V

Collector Base Voltage (VCBO) :

100V

Terminal Form :

PIN/PEG

Voltage - Rated DC :

-100V

Continuous Collector Current :

12A

Current - Collector Cutoff (Max) :

1mA

Polarity :

PNP

Peak Reflow Temperature (Cel) :

260

Packaging :

Tray

Case Connection :

COLLECTOR

Number of Terminations :

2

Weight :

4.535924g

Terminal Position :

BOTTOM

Collector Emitter Voltage (VCEO) :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Radiation Hardening :

No

Pbfree Code :

yes

Base Part Number :

2N6052

Surface Mount :

No