2N6045G
- Mfr.Part #
- 2N6045G
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 8A TO220
- Stock
- 549
- In Stock :
- 549
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 20μA
- Transistor Application :
- SWITCHING
- Continuous Collector Current :
- 8A
- JESD-609 Code :
- e3
- Height :
- 15.748mm
- JEDEC-95 Code :
- TO-220AB
- Package / Case :
- TO-220-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 12mA, 3A
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 3A 4V
- Max Collector Current :
- 8A
- Voltage - Rated DC :
- -100V
- Width :
- 4.826mm
- Terminal Finish :
- Tin (Sn)
- Pbfree Code :
- yes
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Element Configuration :
- Single
- Current Rating :
- 8A
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- Transistor Type :
- NPN - Darlington
- Weight :
- 4.535924g
- Collector Emitter Breakdown Voltage :
- 100V
- Mounting Type :
- Through Hole
- Power Dissipation :
- 75W
- Length :
- 10.2616mm
- Lifecycle Status :
- ACTIVE (Last Updated: 22 hours ago)
- Polarity :
- NPN
- Published :
- 2006
- Number of Elements :
- 1
- Number of Pins :
- 3
- Packaging :
- Tube
- Collector Emitter Voltage (VCEO) :
- 100V
- Operating Temperature :
- -65°C~150°C TJ
- Factory Lead Time :
- 2 Weeks
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- 2V
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Surface Mount :
- No
- hFE Min :
- 1000
- Max Power Dissipation :
- 75W
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Base Voltage (VCBO) :
- 100V
- Base Part Number :
- 2N6045
- Transistor Element Material :
- SILICON
- Case Connection :
- COLLECTOR
- Datasheets
- 2N6045G

NPN - Darlington -65°C~150°C TJ 20μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
2N6045G Overview
DC current gain in this device equals 1000 @ 3A 4V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2V @ 12mA, 3A.Single BJT transistor is essential to maintain the continuous collector voltage at 8A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 8A current rating.In extreme cases, the collector current can be as low as 8A volts.
2N6045G Features
the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 12mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
2N6045G Applications
There are a lot of ON Semiconductor
2N6045G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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