2N6045G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

hFE Min :

1000

Mounting Type :

Through Hole

Polarity :

NPN

Collector Emitter Voltage (VCEO) :

100V

Transistor Application :

SWITCHING

Collector Emitter Breakdown Voltage :

100V

ECCN Code :

EAR99

Terminal Finish :

Tin (Sn)

Current - Collector Cutoff (Max) :

20μA

Emitter Base Voltage (VEBO) :

5V

Transistor Element Material :

SILICON

Weight :

4.535924g

Transistor Type :

NPN - Darlington

Package / Case :

TO-220-3

Max Collector Current :

8A

REACH SVHC :

No SVHC

Length :

10.2616mm

Element Configuration :

Single

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

2 Weeks

Number of Elements :

1

Continuous Collector Current :

8A

Current Rating :

8A

Lifecycle Status :

ACTIVE (Last Updated: 22 hours ago)

Lead Free :

Lead Free

Max Power Dissipation :

75W

Surface Mount :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2006

Time@Peak Reflow Temperature-Max (s) :

40

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 3A 4V

Radiation Hardening :

No

Vce Saturation (Max) @ Ib, Ic :

2V @ 12mA, 3A

JEDEC-95 Code :

TO-220AB

Pbfree Code :

yes

Number of Pins :

3

Base Part Number :

2N6045

Pin Count :

3

Packaging :

Tube

Width :

4.826mm

Peak Reflow Temperature (Cel) :

260

Height :

15.748mm

Power Dissipation :

75W

Number of Terminations :

3

Voltage - Rated DC :

-100V

Operating Temperature :

-65°C~150°C TJ

Collector Emitter Saturation Voltage :

2V

Case Connection :

COLLECTOR

Collector Base Voltage (VCBO) :

100V