2N6045G

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Mfr.Part #
2N6045G
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 100V 8A TO220
Stock
549
In Stock :
549

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Current - Collector Cutoff (Max) :
20μA
Transistor Application :
SWITCHING
Continuous Collector Current :
8A
JESD-609 Code :
e3
Height :
15.748mm
JEDEC-95 Code :
TO-220AB
Package / Case :
TO-220-3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vce Saturation (Max) @ Ib, Ic :
2V @ 12mA, 3A
Lead Free :
Lead Free
DC Current Gain (hFE) (Min) @ Ic, Vce :
1000 @ 3A 4V
Max Collector Current :
8A
Voltage - Rated DC :
-100V
Width :
4.826mm
Terminal Finish :
Tin (Sn)
Pbfree Code :
yes
ECCN Code :
EAR99
Pin Count :
3
Emitter Base Voltage (VEBO) :
5V
Element Configuration :
Single
Current Rating :
8A
Radiation Hardening :
No
REACH SVHC :
No SVHC
Transistor Type :
NPN - Darlington
Weight :
4.535924g
Collector Emitter Breakdown Voltage :
100V
Mounting Type :
Through Hole
Power Dissipation :
75W
Length :
10.2616mm
Lifecycle Status :
ACTIVE (Last Updated: 22 hours ago)
Polarity :
NPN
Published :
2006
Number of Elements :
1
Number of Pins :
3
Packaging :
Tube
Collector Emitter Voltage (VCEO) :
100V
Operating Temperature :
-65°C~150°C TJ
Factory Lead Time :
2 Weeks
Number of Terminations :
3
Collector Emitter Saturation Voltage :
2V
RoHS Status :
ROHS3 Compliant
Peak Reflow Temperature (Cel) :
260
Surface Mount :
No
hFE Min :
1000
Max Power Dissipation :
75W
Time@Peak Reflow Temperature-Max (s) :
40
Collector Base Voltage (VCBO) :
100V
Base Part Number :
2N6045
Transistor Element Material :
SILICON
Case Connection :
COLLECTOR
Datasheets
2N6045G
Introducing Transistors - Bipolar (BJT) - Single onsemi 2N6045G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Mounting Type:Through Hole, Number of Pins:3, Operating Temperature:-65°C~150°C TJ, Number of Terminations:3, Base Part Number:2N6045, 2N6045G pinout, 2N6045G datasheet PDF, 2N6045G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2N6045G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2N6045G


NPN - Darlington -65°C~150°C TJ 20μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

2N6045G Overview


DC current gain in this device equals 1000 @ 3A 4V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 2V @ 12mA, 3A.Single BJT transistor is essential to maintain the continuous collector voltage at 8A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 8A current rating.In extreme cases, the collector current can be as low as 8A volts.

2N6045G Features


the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 12mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is 8A


2N6045G Applications


There are a lot of ON Semiconductor
2N6045G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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