2N6042
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- Mfr.Part #
- 2N6042
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 8A TO220
- Stock
- 9,339
- In Stock ：
- 9,339
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Continuous Collector Current :
- 8A
- Collector Emitter Breakdown Voltage :
- 100V
- Collector Emitter Voltage (VCEO) :
- 100V
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- PNP - Darlington
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 5V
- JEDEC-95 Code :
- TO-220AB
- Operating Temperature :
- -65°C~150°C TJ
- Surface Mount :
- No
- Max Collector Current :
- 8A
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- -100V
- Packaging :
- Tube
- Package / Case :
- TO-220-3
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 12mA, 3A
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- 2V
- Radiation Hardening :
- No
- Current Rating :
- -8A
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- 100V
- Factory Lead Time :
- 2 Weeks
- Transistor Element Material :
- SILICON
- Length :
- 10.2616mm
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation :
- 75W
- Current - Collector Cutoff (Max) :
- 20μA
- Pin Count :
- 3
- Height :
- 15.748mm
- REACH SVHC :
- No SVHC
- Contact Plating :
- Tin
- Published :
- 2000
- Weight :
- 4.535924g
- Number of Pins :
- 3
- Width :
- 4.826mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Base Part Number :
- 2N6042
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 3A 4V
- Polarity :
- PNP
- Max Power Dissipation :
- 75W
- Case Connection :
- COLLECTOR
- Datasheets
- 2N6042
PNP - Darlington -65°C~150°C TJ 20μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
2N6042G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 1000 @ 3A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2V @ 12mA, 3A.Single BJT transistor is recommended to keep the continuous collector voltage at 8A in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is -8A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor is possible to have a collector current as low as 8A volts at Single BJT transistors maximum.
2N6042G Features
the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 12mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -8A
2N6042G Applications
There are a lot of ON Semiconductor
2N6042G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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