2N6040G
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- Mfr.Part #
- 2N6040G
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 60V 8A TO220
- Stock
- 1
- In Stock ：
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 5V
- Packaging :
- Tube
- Length :
- 10.53mm
- Width :
- 4.83mm
- hFE Min :
- 1000
- JESD-609 Code :
- e3
- Max Collector Current :
- 8A
- Surface Mount :
- No
- Operating Temperature :
- -65°C~150°C TJ
- Collector Emitter Voltage (VCEO) :
- 60V
- Peak Reflow Temperature (Cel) :
- 260
- Height :
- 15.75mm
- Voltage - Rated DC :
- -60V
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 16mA, 4A
- ECCN Code :
- EAR99
- Weight :
- 6.000006g
- Collector Base Voltage (VCBO) :
- 60V
- Number of Elements :
- 1
- Transistor Type :
- PNP - Darlington
- Continuous Collector Current :
- 8A
- Lead Free :
- Lead Free
- Factory Lead Time :
- 2 Weeks
- Contact Plating :
- Tin
- Pin Count :
- 3
- Number of Terminations :
- 3
- Package / Case :
- TO-220-3
- Power Dissipation :
- 75W
- Max Power Dissipation :
- 75W
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 4A 4V
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Current - Collector Cutoff (Max) :
- 20μA
- Transition Frequency :
- 4MHz
- Pbfree Code :
- yes
- Case Connection :
- COLLECTOR
- Published :
- 2001
- REACH SVHC :
- No SVHC
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- JEDEC-95 Code :
- TO-220AB
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Base Part Number :
- 2N6040
- Collector Emitter Breakdown Voltage :
- 60V
- Polarity :
- PNP
- Radiation Hardening :
- No
- Mounting Type :
- Through Hole
- Collector Emitter Saturation Voltage :
- 2V
- Current Rating :
- 8A
- Datasheets
- 2N6040G
PNP - Darlington -65°C~150°C TJ 20μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
2N6040G Overview
In this device, the DC current gain is 1000 @ 4A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2V @ 16mA, 4A.A 8A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 8A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 4MHz.Single BJT transistor is possible for the collector current to fall as low as 8A volts at Single BJT transistors maximum.
2N6040G Features
the DC current gain for this device is 1000 @ 4A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 16mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
a transition frequency of 4MHz
2N6040G Applications
There are a lot of ON Semiconductor
2N6040G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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