2N6038G
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- Mfr.Part #
- 2N6038G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 4A TO126
- Stock
- 29
- In Stock ：
- 29
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Continuous Collector Current :
- 4A
- Current Rating :
- 4A
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Base Part Number :
- 2N6038
- Halogen Free :
- Halogen Free
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 60V
- Radiation Hardening :
- No
- Element Configuration :
- Single
- Power Dissipation :
- 40W
- Current - Collector Cutoff (Max) :
- 100μA
- Package / Case :
- TO-225AA, TO-126-3
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Surface Mount :
- No
- Operating Temperature :
- -65°C~150°C TJ
- Transistor Application :
- AMPLIFIER
- Width :
- 2.66mm
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e3
- Transition Frequency :
- 25MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Contact Plating :
- Tin
- Max Power Dissipation :
- 40W
- Length :
- 7.74mm
- Emitter Base Voltage (VEBO) :
- 5V
- Published :
- 2008
- Height :
- 11.04mm
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Voltage - Rated DC :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 2A 3V
- Collector Emitter Breakdown Voltage :
- 60V
- Polarity :
- NPN
- Max Collector Current :
- 4A
- Weight :
- 4.535924g
- Transistor Type :
- NPN - Darlington
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 40mA, 4A
- REACH SVHC :
- No SVHC
- Pin Count :
- 3
- Packaging :
- Bulk
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- 2V
- Pbfree Code :
- yes
- Factory Lead Time :
- 2 Weeks
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 60V
- Datasheets
- 2N6038G
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NPN - Darlington -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole
2N6038G Overview
DC current gain in this device equals 750 @ 2A 3V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3V @ 40mA, 4A.Single BJT transistor is essential to maintain the continuous collector voltage at 4A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 4A current rating.As a result, the part has a transition frequency of 25MHz.In extreme cases, the collector current can be as low as 4A volts.
2N6038G Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 25MHz
2N6038G Applications
There are a lot of ON Semiconductor
2N6038G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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