2N6034G
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- Mfr.Part #
- 2N6034G
- Manufacturer
- onsemi
- Package / Case
- TO-225AA, TO-126-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 40V 4A TO126
- Stock
- 23,233
- In Stock ：
- 23,233
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- Current Rating :
- 4A
- Package / Case :
- TO-225AA, TO-126-3
- Power Dissipation :
- 1.5W
- RoHS Status :
- ROHS3 Compliant
- Max Power Dissipation :
- 40W
- Current - Collector Cutoff (Max) :
- 100μA
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Length :
- 7.74mm
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Weight :
- 4.535924g
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 40mA, 4A
- Transistor Application :
- AMPLIFIER
- Factory Lead Time :
- 2 Weeks
- Number of Pins :
- 3
- Published :
- 2006
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -65°C~150°C TJ
- Voltage - Rated DC :
- -40V
- Packaging :
- Bulk
- Halogen Free :
- Halogen Free
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 2A 3V
- Transistor Type :
- PNP - Darlington
- Surface Mount :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Height :
- 11.04mm
- Transition Frequency :
- 25MHz
- Polarity :
- PNP
- Collector Emitter Saturation Voltage :
- 2V
- Collector Base Voltage (VCBO) :
- 40V
- Continuous Collector Current :
- 4A
- REACH SVHC :
- No SVHC
- Contact Plating :
- Tin
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 40V
- Emitter Base Voltage (VEBO) :
- 5V
- Width :
- 2.66mm
- Collector Emitter Voltage (VCEO) :
- 40V
- Max Collector Current :
- 4A
- Base Part Number :
- 2N6034
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Datasheets
- 2N6034G
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PNP - Darlington -65°C~150°C TJ 100μA 1 Elements 3 Terminations SILICON TO-225AA, TO-126-3 Bulk Through Hole
2N6034G Overview
This device has a DC current gain of 750 @ 2A 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2V.A VCE saturation (Max) of 3V @ 40mA, 4A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 4A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 25MHz.A maximum collector current of 4A volts is possible.
2N6034G Features
the DC current gain for this device is 750 @ 2A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 4A
the emitter base voltage is kept at 5V
the current rating of this device is 4A
a transition frequency of 25MHz
2N6034G Applications
There are a lot of ON Semiconductor
2N6034G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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